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  1. Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs

    Article • Russian Microelectronics, December 2023, Pleiades Publishing Ltd

    Dr Valentin Olegovich Turin

  2. A Mass-in-Mass Chain and the Generalization of the Dirac Equation with an Eight-Component Wave Function and with Optical and Acoustic Branches of the Dispersion Relation

    Article • Russian Microelectronics, December 2023, Pleiades Publishing Ltd

    Dr Valentin Olegovich Turin

  3. Compact Modeling of Body Effect for “Extrinsic” MOSFETs

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  4. Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

    Article • January 2022, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  5. An Accurate Analytical Modeling of Contact Resistances in MOSFETs

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  6. The “Extrinsic” Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition Between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value

    Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  7. Inv estigation by the Method of Images of the Heat Flux Distribution at the Semiconductor-Substrate Interface in Transistor Structure from a Point Heat Source Located at the Passivation-Semiconductor Interface

    Article • March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Valentin Olegovich Turin

  8. A Piecewise Approximation for Short-Channel "Extrinsic" MOSFET Drain Current Dependence on Drain-to-Source Bias Including Linear Triode, Linear Saturation and Asymptotic Saturation Regimes

    Article • ECS Transactions, April 2019, The Electrochemical Society

    Gennady Zebrev, Dr Valentin Olegovich Turin

  9. Modelling of saturation current of an organic field-effect transistor with accounting for contact resistances

    Article • IOP Conference Series Materials Science and Engineering, April 2019, Institute of Physics Publishing

    Gennady Zebrev, Dr Valentin Olegovich Turin

  10. A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

    Article • March 2019, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  11. An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing

    Article • IOP Conference Series Materials Science and Engineering, October 2016, Institute of Physics Publishing

    Dr Valentin Olegovich Turin

  12. Modeling and simulation of dose effects in bipolar analog integrated circuits

    Article • December 2014, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  13. Traditional and new improved smoothing functions for MOSFET compact model

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2014, Wiley

    Dr Valentin Olegovich Turin, Gennady Zebrev

  14. Physics-based compact modeling of double-gate graphene field-effect transistor operation

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Valentin Olegovich Turin, Gennady Zebrev

  15. Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation

    Article • October 2009, SPIE

    Dr Valentin Olegovich Turin, Gennady Zebrev

  16. SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS

    Article • June 2007, World Scientific Pub Co Pte Lt

    Dr Valentin Olegovich Turin

  17. SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS

    Article • International Journal of High Speed Electronics and Systems, March 2007, World Scientific Pub Co Pte Lt

    Dr Valentin Olegovich Turin

  18. Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors

    Article • Journal of Applied Physics, September 2006, American Institute of Physics

    Dr Valentin Olegovich Turin

  19. A modified transferred-electron high-field mobility model for GaN devices simulation

    Article • Solid-State Electronics, October 2005, Elsevier

    Dr Valentin Olegovich Turin

  20. Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

    Article • MRS Proceedings, January 2005, Cambridge University Press

    Dr Valentin Olegovich Turin

  21. Numerical analysis of radio-frequency single-electron transistor operation

    Article • Physical Review B, May 2004, American Physical Society (APS)

    Dr Valentin Olegovich Turin

  22. Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN∕substrate interface

    Article • Electronics Letters, January 2004, the Institution of Engineering and Technology (the IET)

    Dr Valentin Olegovich Turin

  23. Analysis of the radio-frequency single-electron transistor with large quality factor

    Article • Applied Physics Letters, October 2003, American Institute of Physics

    Dr Valentin Olegovich Turin

  24. Coulomb disintegration of weak electron fluxes and the photocounts

    Article • Uspekhi Fizicheskih Nauk, January 1995, Uspekhi Fizicheskikh Nauk (UFN) Journal

    Dr Valentin Olegovich Turin