All Stories

  1. Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire Transistors

    Article • IEEE Transactions on Electron Devices, April 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  2. Investigation and Simulation of SEL Cross Sections at Different Temperatures

    Article • IEEE Transactions on Nuclear Science, July 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  3. Compact Modeling of Body Effect for “Extrinsic” MOSFETs

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  4. A universal approach to FET compact modeling: case study for MESFETs and OFETs

    Article • January 2022, SPIE

    Gennady Zebrev

  5. Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

    Article • January 2022, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  6. Long-term irradiation effects in p-MNOS transistor: experiment results

    Article • January 2022, SPIE

    Gennady Zebrev

  7. An Accurate Analytical Modeling of Contact Resistances in MOSFETs

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  8. The “Extrinsic” Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition Between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value

    Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Valentin Olegovich Turin

  9. Investigation of Dose and Dose Rate Sensitivity of RADFETs in Space Environment

    Article • March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  10. Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, October 2019, Elsevier

    Gennady Zebrev

  11. Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation

    Article • Microelectronics Reliability, September 2019, Elsevier

    Gennady Zebrev

  12. Extreme Value Based Estimation of Critical Single Event Failure Probability

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  13. Static and Dynamic Oxide-Trapped- Charge-Induced Variability in Nanoscale CMOS Circuits

    Article • IEEE Transactions on Electron Devices, June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  14. A Piecewise Approximation for Short-Channel "Extrinsic" MOSFET Drain Current Dependence on Drain-to-Source Bias Including Linear Triode, Linear Saturation and Asymptotic Saturation Regimes

    Article • ECS Transactions, April 2019, The Electrochemical Society

    Gennady Zebrev, Dr Valentin Olegovich Turin

  15. Modelling of saturation current of an organic field-effect transistor with accounting for contact resistances

    Article • IOP Conference Series Materials Science and Engineering, April 2019, Institute of Physics Publishing

    Gennady Zebrev, Dr Valentin Olegovich Turin

  16. 2nd International Telecommunication Conference “Advanced Micro - and Nanoelectronic Systems and Technologies”

    Article • IOP Conference Series Materials Science and Engineering, April 2019, Institute of Physics Publishing

    Gennady Zebrev

  17. A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

    Article • March 2019, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  18. Compact modeling of electrical characteristics of p-MNOS based RADFETs

    Article • March 2019, SPIE

    Gennady Zebrev

  19. Gallium Nitride FET Model

    Article • IOP Conference Series Materials Science and Engineering, February 2019, Institute of Physics Publishing

    Gennady Zebrev

  20. Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

    Article • IOP Conference Series Materials Science and Engineering, February 2019, Institute of Physics Publishing

    Gennady Zebrev

  21. GEANT4 simulation of nuclear interaction induced soft errors in digital nanoscale electronics: Interrelation between proton and heavy ion impacts

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, January 2019, Elsevier

    Gennady Zebrev

  22. SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs

    Article • High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes, January 2019, Begell House

    Gennady Zebrev

  23. ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  24. Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  25. Circuit-Level Layout-Aware Modeling of Single-Event Effects in 65-nm CMOS ICs

    Article • IEEE Transactions on Nuclear Science, August 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  26. Physics-based modeling of TID induced global static leakage in different CMOS circuits

    Article • Microelectronics Reliability, May 2018, Elsevier

    Gennady Zebrev

  27. Monte Carlo simulation of nuclear reaction induced soft error rate in modern commercial circuits

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  28. Simulation of radiation-induced supply leakage currents in modern digital CMOS thermometer DS18B20

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  29. Multiple Cell Event Partitioning for Simulation of Soft Error Rates in Space Systems with Embedded Error Correcting Codes

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  30. SPICE-level layout-aware single event effects simulation of majority voters

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  31. Total Dose Radiation Response of n-Channel Enhancement Mode Field Effect Transistors over Wide Operation Temperature Range

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  32. Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

    Article • IEEE Transactions on Nuclear Science, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  33. Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

    Article • IEEE Transactions on Nuclear Science, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  34. SIMULATION OF THE INTERDEVICE LEAKAGE CURRENT UNDERNEATH THICK ISOLATION OXIDES IN CMOS FPGAS

    Article • High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes, January 2017, Begell House

    Gennady Zebrev

  35. Dielectric influence on IV curve of graphene field effect transistor

    Article • December 2016, SPIE

    Gennady Zebrev

  36. Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

    Article • December 2016, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  37. A simple calculation method for heavy ion induced soft error rate in space environment

    Article • December 2016, SPIE

    Gennady Zebrev

  38. Compact modeling of radiation-induced drain leakage current

    Article • December 2016, SPIE

    Gennady Zebrev

  39. Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

    Article • IEEE Transactions on Nuclear Science, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  40. Non-equilibrium carrier capture, recombination and annealing in thick insulators and their impact on radiation hardness

    Article • Journal of Semiconductors, November 2016, Institute of Physics Publishing

    Gennady Zebrev

  41. 1st International Telecommunication Conference “Advanced Micro- and Nanoelectronic Systems and Technologies”

    Article • IOP Conference Series Materials Science and Engineering, October 2016, Institute of Physics Publishing

    Gennady Zebrev

  42. Taking into account the space environments variability for prediction of dose response in bipolar devices

    Article • IOP Conference Series Materials Science and Engineering, October 2016, Institute of Physics Publishing

    Gennady Zebrev

  43. Technology and characteristics of the transistor with a channel based on graphene

    Article • IOP Conference Series Materials Science and Engineering, October 2016, Institute of Physics Publishing

    Gennady Zebrev

  44. Compact modeling of I-V characteristics in irradiated MOSFETs: Impact of operation temperature and interface traps

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  45. Compact modeling of soft error rate in space environment

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  46. Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, August 2016, Elsevier

    Gennady Zebrev

  47. Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  48. Physical Mechanisms of Radiation Response in Thick Isolation Oxides for Different Temperatures and Dose Rates

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  49. Statistics and methodology of multiple cell upset characterization under heavy ion irradiation

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, March 2015, Elsevier

    Dr Maxim S Gorbunov, Gennady Zebrev

  50. Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution

    Article • December 2014, SPIE

    Gennady Zebrev

  51. Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

    Article • December 2014, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  52. Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

    Article • December 2014, SPIE

    Gennady Zebrev

  53. Modeling and simulation of dose effects in bipolar analog integrated circuits

    Article • December 2014, SPIE

    Gennady Zebrev, Dr Valentin Olegovich Turin

  54. Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  55. Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  56. Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  57. Modeling electrostatics of double gated monolayer MoS<inf>2</inf> channel field-effect transistors

    Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  58. Traditional and new improved smoothing functions for MOSFET compact model

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2014, Wiley

    Dr Valentin Olegovich Turin, Gennady Zebrev

  59. Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  60. Design of 65 nm CMOS SRAM for space applications: A comparative study

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  61. Simulation of bipolar transistors degradation at various dose rates and electrical modes for high dose conditions

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  62. Fault-Tolerant SOI Microprocessor for Space Applications

    Article • IEEE Transactions on Nuclear Science, August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  63. Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

    Article • IEEE Transactions on Electron Devices, June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  64. Analysis of SOI CMOS Microprocessor's SEE Sensitivity: Correlation of the Results Obtained by Different Test Methods

    Article • IEEE Transactions on Nuclear Science, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  65. Physics-based compact modeling of double-gate graphene field-effect transistor operation

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Valentin Olegovich Turin, Gennady Zebrev

  66. Using capacitance methods for interface trap level density extraction in graphene field-effect devices

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  67. Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  68. Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

    Article • IEEE Transactions on Nuclear Science, June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  69. Methodology of Soft Error Rate Computation in Modern Microelectronics

    Article • IEEE Transactions on Nuclear Science, December 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  70. Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

    Article • October 2009, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  71. Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation

    Article • October 2009, SPIE

    Dr Valentin Olegovich Turin, Gennady Zebrev

  72. Methodology of soft error rate computation in modern microelectronics

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  73. Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

    Article • IEEE Transactions on Nuclear Science, August 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  74. Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  75. Electrostatics and diffusion-drift transport in graphene field effect transistors

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  76. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  77. Parasitic bipolar effect in modern SOI CMOS technologies

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  78. <title>Graphene nanoelectronics: electrostatics and kinetics</title>

    Article • March 2008, SPIE

    Gennady Zebrev

  79. Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

    Article • IEEE Transactions on Nuclear Science, August 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  80. Compact physical modeling of fully depleted SOI MOSFET

    Article • May 2006, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  81. <title>Nonequilibrium diagrammatic technique for nanoscale devices</title>

    Article • May 2006, SPIE

    Gennady Zebrev

  82. Modeling and simulation of the enhanced low-dose-rate sensitivity of thick isolating layers in advanced ICs

    Article • Russian Microelectronics, May 2006, Pleiades Publishing Ltd

    Gennady Zebrev

  83. Modeling neutron ionization effects on high-density CMOS circuit elements

    Article • Russian Microelectronics, May 2006, Pleiades Publishing Ltd

    Gennady Zebrev

  84. PRIVET-A Heavy Ion Induced Single Event Upset Rate Simulator in Space Environment

    Article • September 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  85. Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

    Article • September 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  86. Article • Russian Microelectronics, January 2003, Springer Science + Business Media

    Gennady Zebrev

  87. Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors

    Article • IEEE Transactions on Nuclear Science, December 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  88. Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response

    Article • Microelectronics Reliability, April 2002, Elsevier

    Gennady Zebrev

  89. Article • Instruments and Experimental Techniques, January 2000, Springer Science + Business Media

    Gennady Zebrev

  90. Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

    Article • IEEE Transactions on Nuclear Science, June 1996, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  91. Diffusion-Drift Model of Fully Depleted SOI MOSFET

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  92. A diagram technique for nonequilibrium processes in semiconductor microstructures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev

  93. Temperature response of irradiated MOSFETs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev