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  1. Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS-1D

    Article • Materials Today Proceedings, January 2021, Elsevier

    Dr Trupti R Lenka

  2. Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study

    Article • IET Circuits Devices & Systems, October 2020, the Institution of Engineering and Technology (the IET)

    Dr Trupti R Lenka

  3. Structural, electronic and optical properties of Ag2MgSn(S/Se)4 quaternary chalcogenides as solar cell absorber layer: An Ab-initio study

    Article • Solar Energy, October 2020, Elsevier

    Dr Trupti R Lenka

  4. High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation

    Article • Applied Optics, August 2020, Optical Society of America (OSA)

    Dr Trupti R Lenka

  5. A novel β ‐Ga 2 O 3 HEMT with f T of 166 GHz ...

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, August 2020, Wiley

    Dr Trupti R Lenka

  6. Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics

    Article • Journal of Electronic Materials, June 2020, Springer Science + Business Media

    Dr Trupti R Lenka

  7. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

    Article • Applied Optics, June 2020, Optical Society of America (OSA)

    Dr Trupti R Lenka

  8. Numerical analysis of high-efficiency lead-free perovskite solar cell with NiO as hole transport material and PCBM as electron transport material

    Article • CSI Transactions on ICT, June 2020, Springer Science + Business Media

    Dr Trupti R Lenka

  9. GaN and Ga2O3-based wide bandgap semiconductor devices for emerging nanoelectronics

    Article • CSI Transactions on ICT, May 2020, Springer Science + Business Media

    Dr Trupti R Lenka

  10. Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

    Article • Micromachines, July 2019, MDPI AG

    Dr Trupti R Lenka

  11. Distributed Parameter Modelling of Cutout 2-DOF Cantilevered Piezo-Magneto-Elastic Energy Harvester

    Article • Journal of Microelectromechanical Systems, December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka, Yaowen Yang

  12. Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells

    Article • Materials Research Express, November 2018, Institute of Physics Publishing

    Dr Trupti R Lenka

  13. Polarization Charges in a High-Performance GaN/InGaN Core/Shell Multiple Quantum Well Nanowire for Solar Energy Harvesting

    Article • IEEE Transactions on Nanotechnology, November 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  14. Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, May 2018, Wiley

    Dr Trupti R Lenka

  15. A Compact Thermal Noise Model for Enhancement mode N-polar GaN MOS-HEMT including 2DEG Density Solution with Two Sub-bands

    Article • IET Circuits Devices & Systems, March 2018, the Institution of Engineering and Technology (the IET)

    Dr Trupti R Lenka, deepak panda

  16. An analytical model with two degree of freedom of piezo-magneto-elastic energy harvester for low frequency wide bandwidth applications

    Article • Micro & Nano Letters, March 2018, the Institution of Engineering and Technology (the IET)

    Krishnasamy M, Dr Trupti R Lenka

  17. Distributed parameter modeling to prevent charge cancellation for discrete thickness piezoelectric energy harvester

    Article • Solid-State Electronics, March 2018, Elsevier

    Dr Trupti R Lenka

  18. Enhancement of Broad Light Detection Based on Annealed Al-NPs Assisted TiO2-NWs Deposited on p-Si by GLAD Technique

    Article • IEEE Transactions on Nanotechnology, March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  19. Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2018, Wiley

    Dr Trupti R Lenka

  20. Exploiting Polarization Charges for High-Performance (000-1) Facet GaN/InGaN/GaN Core/Shell/Shell Triangular Nanowire Solar Cell

    Article • IEEE Journal of Quantum Electronics, October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  21. Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

    Article • International Journal of RF and Microwave Computer-Aided Engineering, September 2017, Wiley

    Dr Trupti R Lenka, deepak panda

  22. Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, July 2017, Wiley

    Dr Trupti R Lenka, Mr Raghunandan Swain

  23. Distributed Parameter Model for Assorted Piezoelectric Harvester to Prevent Charge Cancellation

    Article • IEEE Sensors Letters, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  24. Plasmon-Sensitized Optoelectronic Properties of Au Nanoparticle-Assisted Vertically Aligned TiO2 Nanowires by GLAD Technique

    Article • IEEE Transactions on Electron Devices, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  25. Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT

    Article • Materials Science in Semiconductor Processing, October 2016, Elsevier

    Dr Trupti R Lenka

  26. Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

    Article • IET Circuits Devices & Systems, September 2016, the Institution of Engineering and Technology (the IET)

    Mr Raghunandan Swain, Dr Trupti R Lenka

  27. Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission

    Article • IEEE Transactions on Electron Devices, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  28. Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2Nanowires

    Article • IEEE Transactions on Nanotechnology, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  29. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

    Article • Journal of Semiconductors, April 2016, Institute of Physics Publishing

    Dr Trupti R Lenka

  30. Distributed Parameter Modeling of Cantilevered-d33-Mode Piezoelectric Energy Harvesters

    Article • IEEE Transactions on Electron Devices, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  31. Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT

    Article • Semiconductors, March 2016, Pleiades Publishing Ltd

    Dr Trupti R Lenka

  32. Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT

    Article • Journal of Electronic Materials, December 2015, Springer Science + Business Media

    Dr Trupti R Lenka

  33. A Model for Doubly Clamped Piezoelectric Energy Harvesters With Segmented Electrodes

    Article • IEEE Electron Device Letters, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  34. Investigation of critical barrier thickness in lattice matched InAlN/GaN MOSHEMT towards normally-off operation

    Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  35. Performance analysis and improvement of nanoscale double gate Junctionless transistor based inverter using high-K gate dielectrics

    Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  36. Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT

    Article • Journal of the Korean Physical Society, November 2015, Korean Physical Society

    Dr Trupti R Lenka

  37. Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, October 2015, Wiley

    Dr Trupti R Lenka

  38. Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT

    Article • Superlattices and Microstructures, August 2015, Elsevier

    Mr Raghunandan Swain, Dr Trupti R Lenka

  39. Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

    Article • Journal of Computational Electronics, June 2015, Springer Science + Business Media

    Mr Raghunandan Swain, Dr Trupti R Lenka

  40. DC & RF characteristics of normally-off AIN/GaN MOSHEMT by varying oxide thickness

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  41. Normally-off Al0.25Ga0.75N/GaN MOSHEMT with stack gate dielectric structure

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  42. Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

    Article • Pramana, May 2015, Springer Science + Business Media

    Mr Raghunandan Swain, Dr Trupti R Lenka

  43. A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT

    Article • Semiconductors, April 2015, Pleiades Publishing Ltd

    Dr Trupti R Lenka

  44. Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

    Article • Journal of Semiconductors, March 2015, Institute of Physics Publishing

    Mr Raghunandan Swain, Dr Trupti R Lenka

  45. Comparative analysis of GaN based MOSHEMT devices for RF applications

    Article • March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  46. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, February 2015, Wiley

    Mr Raghunandan Swain, Dr Trupti R Lenka

  47. 374GHz cut-off frequency of ultra thin InAlN/AlN/GaN MIS HEMT

    Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  48. Effect of thin gate dielectrics and gate materials on simulated device characteristics of 3D double gate JNT

    Article • Superlattices and Microstructures, January 2015, Elsevier

    Dr Trupti R Lenka

  49. Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT

    Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  50. Realization of improved transconductance and capacitance characteristics in Al0.3Ga0.7N/AlN/GaN HEMT

    Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  51. Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Mr Raghunandan Swain, Dr Trupti R Lenka

  52. 2DEG transport characteristics by self-consistent subband calculations of Schrödinger and poisson equations in InAlN/GaN HEMT

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  53. Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT

    Article • Journal of Semiconductors, October 2014, Institute of Physics Publishing

    Dr Trupti R Lenka

  54. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable highION/IOFFratio

    Article • Journal of Semiconductors, June 2014, Institute of Physics Publishing

    Dr Trupti R Lenka

  55. RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

    Article • March 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  56. Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT

    Article • February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  57. RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

    Article • February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  58. RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT

    Article • Journal of Semiconductors, November 2013, Institute of Physics Publishing

    Dr Trupti R Lenka

  59. VLSI implementation of Reed-Solomon encoder algorithm for communication systems

    Article • Radioelectronics and Communications Systems, September 2013, Allerton Press

    Dr Trupti R Lenka

  60. 2DEG transport in gate recessed AlGaN/(InGaN)/GaN HEMT

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Trupti R Lenka

  61. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers

    Article • Pramana, June 2012, Springer Science + Business Media

    Dr Trupti R Lenka

  62. Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

    Article • Semiconductors, September 2011, Pleiades Publishing Ltd

    Dr Trupti R Lenka

  63. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

    Article • Semiconductors, May 2011, Pleiades Publishing Ltd

    Dr Trupti R Lenka

  64. Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

    Article • Advanced Materials Research, December 2010, Trans Tech Publications

    Dr Trupti R Lenka