All Stories

  1. Erratum: Comparative analysis of single and triple material 10 nm Tri-gate FinFET

    Article • Journal of the Korean Physical Society, October 2024, Springer Science + Business Media

    Dr Raghunandan Swain

  2. Comparative analysis of single and triple material 10 nm Tri-gate FinFET

    Article • Journal of the Korean Physical Society, September 2024, Springer Science + Business Media

    Dr Raghunandan Swain

  3. Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

    Article • Physica Scripta, June 2024, Institute of Physics Publishing

    Dr Raghunandan Swain

  4. Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application

    Article • June 2024, Bentham Science Publishers

    Nawal Topno, Dr Raghunandan Swain

  5. DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

    Article • Physica Scripta, June 2024, Institute of Physics Publishing

    Dr Raghunandan Swain

  6. Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

    Article • Transactions on Electrical and Electronic Materials, May 2024, Springer Science + Business Media

    Dr Raghunandan Swain

  7. A Faster and Robust Artificial Neural Network Based Image Encryption Technique With Improved SSIM

    Article • IEEE Access, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Raghunandan Swain

  8. Corrections to “A Faster and Robust Artificial Neural Network Based Image Encryption Technique With Improved SSIM”

    Article • IEEE Access, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Raghunandan Swain

  9. Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications

    Article • IEEE Access, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Raghunandan Swain

  10. Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, July 2017, Wiley

    Dr Trupti R Lenka, Dr Raghunandan Swain

  11. Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

    Article • IET Circuits Devices & Systems, September 2016, the Institution of Engineering and Technology (the IET)

    Dr Raghunandan Swain, Dr Trupti R Lenka

  12. Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT

    Article • Superlattices and Microstructures, August 2015, Elsevier

    Dr Raghunandan Swain, Dr Trupti R Lenka

  13. Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

    Article • Journal of Computational Electronics, June 2015, Springer Science + Business Media

    Dr Raghunandan Swain, Dr Trupti R Lenka

  14. Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

    Article • Pramana, May 2015, Springer Science + Business Media

    Dr Raghunandan Swain, Dr Trupti R Lenka

  15. Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

    Article • Journal of Semiconductors, March 2015, Institute of Physics Publishing

    Dr Raghunandan Swain, Dr Trupti R Lenka

  16. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, February 2015, Wiley

    Dr Raghunandan Swain, Dr Trupti R Lenka

  17. Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Raghunandan Swain, Dr Trupti R Lenka