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  1. A Compact Thermal Noise Model for Enhancement mode N-polar GaN MOS-HEMT including 2DEG Density Solution with Two Sub-bands

    Article • IET Circuits Devices & Systems, March 2018, the Institution of Engineering and Technology (the IET)

    Dr Trupti R Lenka, deepak panda

  2. Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

    Article • International Journal of RF and Microwave Computer-Aided Engineering, September 2017, Wiley

    Dr Trupti R Lenka, deepak panda