All Stories

  1. A 300-GHz-Band 36-Gb/s Scalable 2-D Phased-Array CMOS Double Superheterodyne Receiver

    Article • IEEE Solid-State Circuits Letters, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  2. Calibration method for complex permittivity measurements using s-SNOM combining multiple probe tapping harmonics

    Article • Optics Express, June 2024, Optical Society of America (OSA)

    Prof Shuhei Amakawa

  3. Formulating microwave measurement and design in terms of X-parameters using signal flow graphs

    Article • IEEE Transactions on Microwave Theory and Techniques, September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  4. A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

    Article • IEEE Journal of Solid-State Circuits, October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  5. 300-GHz-Band OFDM Video Transmission with CMOS TX/RX Modules and 40dBi Cassegrain Antenna toward 6G

    Article • IEICE Transactions on Electronics, October 2021, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  6. Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  7. A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array Systems

    Article • June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  8. A 32-Gb/s CMOS Receiver With Analog Carrier Recovery and Synchronous QPSK Demodulation

    Article • IEEE Microwave and Wireless Components Letters, June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  9. Direct White Noise Characterization of Short-Channel MOSFETs

    Article • IEEE Transactions on Electron Devices, April 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  10. Direct white noise characterization of short-channel MOSFETs

    Article • February 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  11. Session 23 Overview: THz Circuits and Front-Ends

    Article • February 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  12. White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

    Article • January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  13. Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

    Article • IEEE Journal of the Electron Devices Society, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  14. An 80-Gb/s 300-GHz-Band Single-Chip CMOS Transceiver

    Article • IEEE Journal of Solid-State Circuits, December 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Minoru Fujishima, Prof Shuhei Amakawa

  15. A 6-mW-DC-Power 300-GHz CMOS Receiver for Near-Field Wireless Communications

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  16. A −40-dBc Integrated-Phase-Noise 45-GHz Sub-Sampling PLL with 3.9-dBm Output and 2.1% DC-to-RF Efficiency

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  17. Highly Configurable Cylindrical-Resonator-Based Bandpass Filter Built of Silica-Based Post-Wall Waveguide and Its Application to Compact E-Band Hybrid-Coupled Diplexer

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  18. Wideband Power-Line Decoupling Technique for Millimeter-Wave CMOS Integrated Circuits

    Article • May 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  19. 9.5 An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver

    Article • February 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  20. Causal Characteristic Impedance Determination Using Calibration Comparison and Propagation Constant

    Article • January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  21. 300-GHz CMOS Transceiver for Terahertz Wireless Communication

    Article • November 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  22. 32-Gbit/s CMOS Receivers in 300-GHz Band

    Article • IEICE Transactions on Electronics, July 2018, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  23. 300-GHz CMOS transmitter module with built-in waveguide transition on a multilayered glass epoxy PCB

    Article • January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  24. A 40 dB peak gain, wideband, low noise intermediate frequency (IF) amplifier

    Article • November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  25. An E-band hybrid-coupled diplexer built of silica-based post-wall waveguide

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  26. A 416-mW 32-Gbit/s 300-GHz CMOS receiver

    Article • August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  27. 56-Gbit/s 16-QAM wireless link with 300-GHz-band CMOS transmitter

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  28. A 32Gbit/s 16QAM CMOS receiver in 300GHz band

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  29. An 80–106 GHz CMOS amplifier with 0.5V supply voltage

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  30. Causal transmission line model incorporating frequency-dependent linear resistors

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  31. DC and RF characterization of RF MOSFET embedding structure

    Article • March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  32. 17.9 A 105Gb/s 300GHz CMOS transmitter

    Article • February 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  33. Integrated-Circuit Approaches to THz Communications: Challenges, Advances, and Future Prospects

    Article • IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences, January 2017, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  34. A 300 GHz CMOS Transmitter With 32-QAM 17.5 Gb/s/ch Capability Over Six Channels

    Article • IEEE Journal of Solid-State Circuits, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  35. Characterization of 60-GHz silica-based post-wall waveguide and low-loss substrate dielectric

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  36. A 300-GHz 64-QAM CMOS transmitter with 21-Gb/s maximum per-channel data rate

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  37. Power spectrum analysis of a tripler-based 300-GHz CMOS up-conversion mixer

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  38. 14.4-dB CMOS D-band low-noise amplifier with 22.6-mW power consumption utilizing bias-optimization technique

    Article • August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  39. System-level evaluation of 300GHz CMOS wireless transmitter using cubic mixer

    Article • August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  40. Terahertz CMOS transmitter supporting high-order digital modulation

    Article • Electronics Letters, July 2016, the Institution of Engineering and Technology (the IET)

    Prof Shuhei Amakawa, Minoru Fujishima, Dr Kyoya Takano

  41. CMOS 300-GHz 64-QAM transmitter

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  42. Quintic mixer: A subharmonic up-conversion mixer for THz transmitter supporting complex digital modulation

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  43. Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth

    Article • IEICE Transactions on Electronics, January 2016, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  44. Scattered Reflections on Scattering Parameters — Demystifying Complex-Referenced S Parameters —

    Article • IEICE Transactions on Electronics, January 2016, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  45. 20.1 A 300GHz 40nm CMOS transmitter with 32-QAM 17.5Gb/s/ch capability over 6 channels

    Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  46. 124-GHz CMOS quadrature voltage-controlled oscillator with fundamental injection locking

    Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  47. Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  48. Compact 138-GHz amplifier with 18-dB peak gain and 27-GHz 3-dB bandwidth

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  49. Comparative analysis of on-chip transmission line de-embedding techniques

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  50. Modeling of wideband decoupling power line for millimeter-wave CMOS circuits

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  51. Parasitic conscious 54 GHz divide-by-4 injection-locked frequency divider

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  52. 300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  53. Compact 160-GHz amplifier with 15-dB peak gain and 41-GHz 3-dB bandwidth

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  54. Compact and low-loss bandpass filter realized in silica-based post-wall waveguide for 60-GHz applications

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  55. Wideband CMOS decoupling power line for millimeter-wave applications

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  56. Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits

    Article • March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  57. Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

    Article • March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  58. Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

    Article • IEICE Transactions on Electronics, January 2015, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  59. Recent progress and prospects of terahertz CMOS

    Article • IEICE Electronics Express, January 2015, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  60. 79GHz CMOS power amplifier using temperature compensation bias

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  61. Design of CMOS resonating push-push frequency doubler

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  62. Design of millimeter-wave CMOS transmission-line-to-waveguide transitions

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  63. Evaluation of CMOS differential transmission lines as two-port networks with on-chip baluns in millimeter-wave band

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  64. Design of well-behaved low-loss millimetre-wave CMOS transmission lines

    Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  65. Process parameter calibration for millimeter-wave CMOS back-end device design with electromagnetic field analysis

    Article • March 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  66. E-Band 65nm CMOS Low-Noise Amplifier Design Using Gain-Boost Technique

    Article • IEICE Transactions on Electronics, January 2014, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  67. CMOS power amplifier with temperature compensation for 79 GHz radar system

    Article • November 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  68. Evaluation of temperature dependence and lifetime of 79GHz power amplifier

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  69. An Inductorless Cascaded Phase-Locked Loop with Pulse Injection Locking Technique in 90 nm CMOS

    Article • International Journal of Microwave Science and Technology, March 2013, Hindawi Publishing Corporation

    Prof Shuhei Amakawa

  70. On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz

    Article • March 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  71. Modeling of Short-Millimeter-Wave CMOS Transmission Line with Lossy Dielectrics with Specific Absorption Spectrum

    Article • IEICE Transactions on Electronics, January 2013, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  72. On the choice of cascade de-embedding methods for on-wafer S-parameter measurement

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  73. Characteristic impedance determination technique for CMOS on-wafer transmission line with large substrate loss

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  74. 1.2–17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

    Article • Japanese Journal of Applied Physics, February 2012, Institute of Physics Publishing

    Prof Shuhei Amakawa

  75. RF signal generator using time domain harmonic suppression technique in 90nm CMOS

    Article • IEICE Electronics Express, January 2012, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  76. A Study of Digitally Controllable Radio Frequency Micro Electro Mechanical Systems Inductor

    Article • Japanese Journal of Applied Physics, May 2011, Institute of Physics Publishing

    Prof Shuhei Amakawa

  77. 2.4–10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor

    Article • Japanese Journal of Applied Physics, April 2011, Institute of Physics Publishing

    Prof Shuhei Amakawa

  78. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

    Article • Japanese Journal of Applied Physics, April 2011, Institute of Physics Publishing

    Prof Shuhei Amakawa

  79. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

    Article • Japanese Journal of Applied Physics, April 2011, Institute of Physics Publishing

    Prof Shuhei Amakawa

  80. Interconnect Design Challenges in Nano CMOS Circuit

    Article • Key Engineering Materials, February 2011, Trans Tech Publications

    Prof Shuhei Amakawa

  81. RF CMOS Integrated Circuit: History, Current Status and Future Prospects

    Article • IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences, January 2011, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  82. High-Frequency Transmission Characteristics of the Interconnects Stacked into the 3D IC Configuration

    Article • Journal of The Japan Institute of Electronics Packaging, January 2011, Japan Institute of Electronics Packaging

    Prof Shuhei Amakawa

  83. HiSIM-SOI: Complete surface-potential-based model valid for all SOI-structure types

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  84. Inductorless 8.9 mW 25 Gb/s 1:4 DEMUX and 4 mW 13 Gb/s 4:1 MUX in 90 nm CMOS

    Article • JSTS Journal of Semiconductor Technology and Science, September 2010, The Institute of Electronics Engineers of Korea

    Prof Shuhei Amakawa

  85. Radio Frequency Micro Electro Mechanical Systems Inductor Configurations for Achieving Large Inductance Variations and High Q-factors

    Article • Japanese Journal of Applied Physics, May 2010, Institute of Physics Publishing

    Prof Shuhei Amakawa

  86. Low-phase-noise wide-frequency-range ring-VCO-based scalable PLL with subharmonic injection locking in 0.18 µm CMOS

    Article • May 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  87. Design of On-Chip High Speed Interconnect on Complementary Metal Oxide Semiconductor 180 nm Technology

    Article • Japanese Journal of Applied Physics, April 2010, Institute of Physics Publishing

    Prof Shuhei Amakawa

  88. RF Signal Generator Based on Time-to-Analog Converter in 0.18 µm Complementary Metal Oxide Semiconductor

    Article • Japanese Journal of Applied Physics, April 2010, Institute of Physics Publishing

    Prof Shuhei Amakawa

  89. A Thru-Only De-Embedding Method Foron-Wafer Characterization of Multiport Networks

    Article • April 2010, IntechOpen

    Prof Shuhei Amakawa

  90. On the validity of bisection-based thru-only de-embedding

    Article • March 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  91. Wide-band, high linear low noise amplifier design in 0.18um CMOS technology

    Article • IEICE Electronics Express, January 2010, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  92. A Universal Equivalent Circuit Model for Ceramic Capacitors

    Article • IEICE Transactions on Electronics, January 2010, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  93. Highly Energy-Efficient On-Chip Pulsed-Current-Mode Transmission Line Interconnect

    Article • January 2010, IntechOpen

    Prof Shuhei Amakawa

  94. Design of CMOS inverter-based output buffers adapting the cherry-hooper broadbanding technique

    Article • August 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  95. SMAFTI packaging technology for new interconnect hierarchy

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  96. S-Parameter-Based Modal Decomposition of Multiconductor Transmission Lines and Its Application to De-Embedding

    Article • March 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  97. A 20 Gb/s 1:4 DEMUX with Near-Rail-to-Rail Logic Swing in 90 nm CMOS process

    Article • February 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  98. Physical design challenges to nano-CMOS circuits

    Article • IEICE Electronics Express, January 2009, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  99. An 8.9mW 25Gb/s inductorless 1:4 DEMUX in 90nm CMOS

    Article • January 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  100. Inter-Chip Wiring Technology for 3-D LSI

    Article • Electrochemistry, January 2009, The Electrochemical Society of Japan

    Prof Shuhei Amakawa

  101. Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress

    Article • IEICE Transactions on Electronics, July 2008, Institute of Electronics, Information and Communications Engineers (IEICE)

    Prof Shuhei Amakawa

  102. Single-parameter nonadiabatic quantized charge pumping

    Article • Physical Review B, April 2008, American Physical Society (APS)

    Prof Shuhei Amakawa

  103. Adaptable wire-length distribution with tunable occupation probability

    Article • March 2007, ACM (Association for Computing Machinery)

    Prof Shuhei Amakawa

  104. A MOS Transistor-Array for Accurate Measurement of Subthreshold Leakage Variation

    Article • March 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  105. Nanosilicon for single-electron devices

    Article • Current Applied Physics, April 2004, Elsevier

    Prof Shuhei Amakawa

  106. Cross-coupling in Coulomb blockade circuits: Bidirectional electron pump

    Article • Journal of Applied Physics, August 2003, American Institute of Physics

    Prof Shuhei Amakawa

  107. A New Approach to Failure Analysis and Yield Enhancement of Very Large-scale Integrated Systems

    Article • January 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Shuhei Amakawa

  108. Characteristics of two Coulomb blockade transistors separated by an island to which an oscillating potential is applied: Theory and experiment

    Article • Applied Physics Letters, July 2001, American Institute of Physics

    Prof Shuhei Amakawa

  109. Nanoscale Coulomb blockade memory and logic devices

    Article • Nanotechnology, May 2001, Institute of Physics Publishing

    Prof Shuhei Amakawa

  110. Analysis of multiphase clocked electron pumps consisting of single-electron transistors

    Article • Journal of Applied Physics, May 2001, American Institute of Physics

    Prof Shuhei Amakawa

  111. Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory

    Article • Japanese Journal of Applied Physics, March 2001, Institute of Physics Publishing

    Prof Shuhei Amakawa

  112. Scaling of the single-electron tunnelling current through ultrasmall tunnel junctions

    Article • Journal of Physics Condensed Matter, July 2000, Institute of Physics Publishing

    Prof Shuhei Amakawa

  113. A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation

    Article • Japanese Journal of Applied Physics, January 1999, Institute of Physics Publishing

    Prof Shuhei Amakawa

  114. Circuit Simulators Aiming at Single-Electron Integration

    Article • Japanese Journal of Applied Physics, March 1998, Institute of Physics Publishing

    Prof Shuhei Amakawa

  115. Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays

    Article • Japanese Journal of Applied Physics, June 1997, Institute of Physics Publishing

    Prof Shuhei Amakawa

  116. Estimation of Cotunneling in Single-Electron Logic and Its Suppression

    Article • Japanese Journal of Applied Physics, February 1996, Institute of Physics Publishing

    Prof Shuhei Amakawa