All Stories

  1. Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

    Article • Journal of Applied Physics, August 2025, American Institute of Physics

    Roger Loo

  2. Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation

    Article • Journal of Applied Physics, June 2019, American Institute of Physics

    Clement Porret, wilfried vandervorst, Roger Loo, Anurag Vohra, Jonatan Slotte

  3. Evolution of phosphorus-vacancy clusters in epitaxial germanium

    Article • Journal of Applied Physics, January 2019, American Institute of Physics

    wilfried vandervorst, Roger Loo, Anurag Vohra, Jonatan Slotte

  4. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

    Article • Applied Physics Letters, December 2018, American Institute of Physics

    Roger Loo

  5. Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

    Article • Applied Physics Letters, November 2018, American Institute of Physics

    Roger Loo

  6. New method to release channels for Ge gate-all-around transistors.

    Article • Solid State Phenomena, August 2018, Trans Tech Publications

    Clement Porret, Roger Loo, Anurag Vohra

  7. HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth

    Article • Solid State Phenomena, September 2014, Trans Tech Publications

    Roger Loo