All Stories

  1. Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

    Article • Applied Physics Letters, June 2022, American Institute of Physics

    Anurag Vohra

  2. Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

    Article • Journal of Applied Physics, September 2021, American Institute of Physics

    Anurag Vohra

  3. Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation

    Article • Journal of Applied Physics, June 2019, American Institute of Physics

    Clement Porret, wilfried vandervorst, Roger Loo, Anurag Vohra, Jonatan Slotte

  4. Evolution of phosphorus-vacancy clusters in epitaxial germanium

    Article • Journal of Applied Physics, January 2019, American Institute of Physics

    wilfried vandervorst, Roger Loo, Anurag Vohra, Jonatan Slotte

  5. New method to release channels for Ge gate-all-around transistors.

    Article • Solid State Phenomena, August 2018, Trans Tech Publications

    Clement Porret, Roger Loo, Anurag Vohra