All Stories

  1. Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation

    Article • Journal of Applied Physics, June 2019, American Institute of Physics

    Clement Porret, wilfried vandervorst, Roger Loo, Anurag Vohra, Jonatan Slotte

  2. New method to release channels for Ge gate-all-around transistors.

    Article • Solid State Phenomena, August 2018, Trans Tech Publications

    Clement Porret, Roger Loo, Anurag Vohra