All Stories

  1. Experimental Calibration and Validation of Dynamic Voltage-Dependent SET Model in 65 nm CMOS

    Article • IEEE Transactions on Nuclear Science, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  2. An 80 MS/s 70.8 dB-SNDR Radiation-Tolerant Semi-Time-Interleaved Pipelined-SAR ADC for Space Applications

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, August 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  3. An In-Depth Study on Device Variability in 22 nm FD-SOI NMOSFETs Under X-ray Exposure

    Article • IEEE Transactions on Nuclear Science, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  4. Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors

    Article • IEEE Transactions on Nuclear Science, August 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  5. An 80MS/s 70.79dB-SNDR 60.7fJ/Conv-Step Radiation-Tolerant Semi-Time-interleaved Pipelined-SAR ADC

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  6. THERE IS AN OPINION: "What could be the program for creating domestic CAD systems?"

    Article • Bezopasnost informacionnyh tehnology, September 2022, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

    Dr Maxim S Gorbunov

  7. Platform solutions for the design and development of reliable trusted electronic components

    Article • Bezopasnost informacionnyh tehnology, June 2022, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

    Dr Maxim S Gorbunov

  8. Эволюция радиационного поведения субмикроэлектронных устройств при снижении проектных норм и особенности развития инфраструктуры испытаний и исследований

    Article • Nanoindustry Russia, September 2021, Technosphera JSC

    Dr Maxim S Gorbunov

  9. A MOS Temperature-Insensitive Voltage Divider and Its Application for Voltage Reference Design

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  10. Smart Sub-Microelectronics Radiation Behavior Trends and Test Facilities Evolution

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  11. Total Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  12. Design-Stage Hardening of 65-nm CMOS Standard Cells Against Multiple Events

    Article • IEEE Transactions on Nuclear Science, August 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  13. Standard Verification Flow Compatible Layout-Aware Fault Injection Technique for Single Event Effects Tolerant ASIC Design

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  14. Design of fault-tolerant microprocessors for space applications

    Article • Acta Astronautica, April 2019, Elsevier

    Dr Maxim S Gorbunov

  15. Direct Experimental Performance Comparison of Two Microprocessors for the Efficiency Evaluation of Single Event Effects Mitigation Techniques

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  16. Circuit-Level Layout-Aware Modeling of Single-Event Effects in 65-nm CMOS ICs

    Article • IEEE Transactions on Nuclear Science, August 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  17. Physics-based modeling of TID induced global static leakage in different CMOS circuits

    Article • Microelectronics Reliability, May 2018, Elsevier

    Gennady Zebrev, Dr Maxim S Gorbunov

  18. On board electronic devices safety provided by DICE-based Muller C-elements

    Article • Acta Astronautica, January 2018, Elsevier

    Dr Maxim S Gorbunov

  19. SPICE-level layout-aware single event effects simulation of majority voters

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gennady Zebrev, Dr Maxim S Gorbunov

  20. The high-performance data acquisition system for the GAMMA-400 satellite-borne gamma-ray telescope

    Article • August 2017, Sissa Medialab, SRL

    Dr Maxim S Gorbunov

  21. New stage in high-energy gamma-ray studies with GAMMA-400 after Fermi-LAT

    Article • EPJ Web of Conferences, January 2017, EDP Sciences

    Dr Maxim S Gorbunov

  22. Design Trade-off Between Performance and Fault-Tolerance of Space Onboard Computers

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  23. High-energy gamma-ray studying with GAMMA-400 after Fermi-LAT

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  24. Layout-aware Soft Error Rate Estimation Technique for Integrated Circuits under the Environment with Energetic Charged Particles

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  25. Modifications of a method for low energy gamma-ray incident angle reconstruction in the GAMMA-400 gamma-ray telescope

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  26. Status of the scientific data acquisition system for the GAMMA-400 space telescope mission

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  27. New stage in high-energy gamma-ray studies with GAMMA-400 after Fermi-LAT

    Article • EPJ Web of Conferences, January 2017, EDP Sciences

    Dr Maxim S Gorbunov

  28. Layout-aware simulation of soft errors in sub-100 nm integrated circuits

    Article • December 2016, SPIE

    Dr Maxim S Gorbunov

  29. Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

    Article • December 2016, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  30. DICE-based muller C-elements for soft error tolerant asynchronous ICs

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  31. GAMMA-400 gamma-ray observatory

    Article • August 2016, Sissa Medialab, SRL

    Dr Maxim S Gorbunov

  32. Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells

    Article • IEEE Transactions on Nuclear Science, August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  33. The structure of control and data transfer management system for the GAMMA-400 scientific complex

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  34. The scientific data acquisition system of the GAMMA-400 space project

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  35. The GAMMA-400 gamma-ray telescope for precision gamma-ray emission investigations

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  36. Perspectives of the GAMMA-400 space observatory for high-energy gamma rays and cosmic rays measurements

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  37. Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

    Article • IEEE Transactions on Nuclear Science, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  38. Separation of electrons and protons in the GAMMA-400 gamma-ray telescope

    Article • Advances in Space Research, October 2015, Elsevier

    Dr Maxim S Gorbunov

  39. Semi-Empirical Method for Estimation of Single-Event Upset Cross-Section for SRAM DICE Cells

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  40. Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  41. The GAMMA-400 gamma-ray telescope characteristics. Angular resolution and electrons/protons separation.

    Article • May 2015, Sissa Medialab, SRL

    Dr Maxim S Gorbunov

  42. The GAMMA-400 experiment: Status and prospects

    Article • Bulletin of the Russian Academy of Sciences Physics, March 2015, Allerton Press

    Dr Maxim S Gorbunov

  43. Statistics and methodology of multiple cell upset characterization under heavy ion irradiation

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, March 2015, Elsevier

    Dr Maxim S Gorbunov, Gennady Zebrev

  44. Space γ-observatory GAMMA-400 Current Status and Perspectives

    Article • Physics Procedia, January 2015, Elsevier

    Dr Maxim S Gorbunov

  45. Estimation technique for SET-tolerance of combinational ICs

    Article • December 2014, SPIE

    Dr Maxim S Gorbunov

  46. Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

    Article • December 2014, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  47. SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  48. Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev, Dr Valentin Olegovich Turin

  49. Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  50. SET tolerance of 65 nm CMOS majority voters: A comparative study

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  51. Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev, Dr Valentin Olegovich Turin

  52. Design of 65 nm CMOS SRAM for space applications: A comparative study

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  53. Fault-Tolerant SOI Microprocessor for Space Applications

    Article • IEEE Transactions on Nuclear Science, August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  54. The Gamma-400 space mission

    Article • October 2012, Sissa Medialab, SRL

    Dr Maxim S Gorbunov

  55. Analysis of SOI CMOS Microprocessor's SEE Sensitivity: Correlation of the Results Obtained by Different Test Methods

    Article • IEEE Transactions on Nuclear Science, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  56. Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  57. Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

    Article • IEEE Transactions on Nuclear Science, June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  58. Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

    Article • October 2009, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  59. Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

    Article • IEEE Transactions on Nuclear Science, August 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  60. Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  61. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  62. Parasitic bipolar effect in modern SOI CMOS technologies

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  63. Compact physical modeling of fully depleted SOI MOSFET

    Article • May 2006, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  64. Diffusion-Drift Model of Fully Depleted SOI MOSFET

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev