All Stories

  1. Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy
  2. Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
  3. Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
  4. Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K
  5. Performance Investigation of 4H-SiC PIN Photodiodes With Dual Emitter Designs for Enhanced UV-C Detection
  6. Spectro‐Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials
  7. A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K
  8. Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications
  9. Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
  10. Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
  11. Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications
  12. Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
  13. Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
  14. Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
  15. Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC
  16. Temperature Dependence of 4H-SiC Gate Oxide Breakdown and <i>C</i>-<i>V</i> Properties from Room Temperature to 500 °C
  17. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations
  18. Novel Rapid and Deposition-Free Strategy for FIB Cross-Section Preparation
  19. Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope
  20. Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications
  21. An analog to digital converter in a SiC CMOS technology for high-temperature applications
  22. SiC CMOS Gate Driver for High-Temperature Aerospace Applications
  23. Defects distribution and evolution in selected-area helium ion implanted 4H–SiC
  24. A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K
  25. 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
  26. Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications
  27. Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices
  28. Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials
  29. Intragranular thermal fatigue of Cu thin films: Near-grain boundary hardening, strain localization and voiding
  30. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions
  31. Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material
  32. On the interpretation of confocal spectral depth profiling of color center and carrier concentration by photoluminescence and Raman of implanted 4H–SiC
  33. Unconventional conductivity increase in multilayer black phosphorus
  34. CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
  35. Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation
  36. CMOS compatible manufacturing of a hybrid SET-FET circuit
  37. A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
  38. Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
  39. Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
  40. Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC
  41. MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation
  42. Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing
  43. Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects
  44. MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
  45. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
  46. Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
  47. Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration
  48. Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers
  49. Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC
  50. Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy
  51. Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
  52. Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
  53. Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
  54. Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy
  55. Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
  56. Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect
  57. Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
  58. Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
  59. Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
  60. Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
  61. Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy
  62. Laser Surface Microstructuring of a Bio-Resorbable Polymer to Anchor Stem Cells, Control Adipocyte Morphology, and Promote Osteogenesis
  63. Normalized differential conductance to study current conduction mechanisms in MOS structures
  64. On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials
  65. One-step nanoimprinted Bragg grating sensor based on hybrid polymers
  66. Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing
  67. Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC
  68. Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC
  69. Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining
  70. Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
  71. Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC
  72. Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
  73. Flexible thin film bending sensor based on Bragg gratings in hybrid polymers
  74. Nano- and Micro-Patterned S-, H-, and X-PDMS for Cell-Based Applications: Comparison of Wettability, Roughness, and Cell-Derived Parameters
  75. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
  76. Novel approach based on continuous trench modelling to predict focused ion beam prepared freeform surfaces
  77. TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing
  78. Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity
  79. Polymerization related deformations in multilayer soft stamps for nanoimprint
  80. Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing
  81. 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
  82. Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
  83. Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques
  84. Large area manufacturing of plasmonic colour filters using substrate conformal imprint lithography
  85. Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides
  86. Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers
  87. Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication
  88. Waveguide Bragg gratings in Ormocer hybrid polymers
  89. Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
  90. Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings
  91. Comparison of silicon and 4H silicon carbide patterning using focused ion beams
  92. A DLTS study of hydrogen doped czochralski-grown silicon
  93. Metastable Defects in Proton Implanted and Annealed Silicon
  94. Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques
  95. The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature
  96. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells
  97. Tailoring the Electrical Properties of HfO 2 MOS-Devices by Aluminum Doping
  98. Current conduction mechanism of MIS devices using multidimensional minimization system program
  99. Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
  100. Optical polymers with tunable refractive index for nanoimprint technologies
  101. Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography
  102. DLTS characterization of proton-implanted silicon under varying annealing conditions
  103. A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime
  104. Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon
  105. Bioactivation of Plane and Patterned PDMS Thin Films by Wettability Engineering
  106. MeV-proton channeling in crystalline silicon
  107. Enabling large area and high throughput roll-to-roll NIL by novel inkjetable and photo-curable NIL resists
  108. Nanoscale Characterization of TiO 2 Films Grown by Atomic Layer Deposition on RuO 2 Electrodes
  109. Thickness mapping of high-κ dielectrics at the nanoscale
  110. HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
  111. Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
  112. Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
  113. Functional epoxy polymer for direct nano-imprinting of micro-optical elements
  114. Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
  115. Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
  116. Evaluation of resistless Ga + beam lithography for UV NIL stamp fabrication
  117. TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors
  118. Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction
  119. Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
  120. Accuracy of wafer level alignment with substrate conformal imprint lithography
  121. Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
  122. Novel organic polymer for UV-enhanced substrate conformal imprint lithography
  123. Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
  124. Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
  125. All electrochemical layer deposition for crystalline silicon solar cell manufacturing: Experiments and interpretation
  126. Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy
  127. A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
  128. Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy
  129. Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
  130. Electrical Characterization of Nanostructured p-Silicon Electrodes for Bioimpedance Measurements on Single Cell Level
  131. Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy
  132. Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy
  133. Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
  134. Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations
  135. Guided phase separation of polymer blend thin films on ion beam-induced pre-patterned substrates
  136. Full wafer microlens replication by UV imprint lithography
  137. Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing
  138. (Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers
  139. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
  140. Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
  141. UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
  142. Experimental observation of FIB induced lateral damage on silicon samples
  143. Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSi[sub x]O[sub 2−x] thin films using tunneling atomic force microscopy
  144. Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy
  145. Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
  146. Recent improvements in the integration of field emitters into scanning probe microscopy sensors
  147. Custom-specific UV nanoimprint templates and life-time of antisticking layers
  148. SSRM characterisation of FIB induced damage in silicon
  149. Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement
  150. Accurate parameter extraction for the simulation of direct structuring by ion beams
  151. Quantitative oxide charge determination by photocurrent analysis
  152. UV nanoimprint materials: Surface energies, residual layers, and imprint quality
  153. Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement
  154. Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers
  155. Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry
  156. The influence of the measurement environment on the accuracy of the extraction of the physical parameters of solar cells