All Stories

  1. Characterization of 4H-SiC Lateral MOSFETs up to 773 K

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  2. Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  3. 4H-SiC Tunneling Light Emitter as a Light-Source for Quantum Applications

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  4. Influence of Different Contact Lengths on the Correct Extraction of the Resistance Parameters of TLM Test Structures on 4H-SiC

    Article • Materials Science Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  5. Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  6. Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  7. Challenges in Measuring Thin SiO<sub>2</sub> Layers on 4H-SiC via Spectroscopic Ellipsometry

    Article • Materials Science Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  8. Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate

    Article • Materials Science Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  9. Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements

    Article • Materials Science Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  10. The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  11. Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay

    Article • Defect and Diffusion Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel

  12. A 4H-SiC CTAT Temperature Sensor Operating Between 14 and 481 K

    Article • IEEE Sensors Letters, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  13. Probing crystal axis orientation of birefringent materials via polarized microspectroscopy and anisotropic optical modeling

    Article • Journal of Physics Photonics, December 2025, Institute of Physics Publishing

    Dr. Mathias Rommel

  14. Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy

    Article • Micron, November 2025, Elsevier

    Dr. Mathias Rommel

  15. Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing

    Article • Materials Science Forum, September 2025, Trans Tech Publications

    Dr. Mathias Rommel

  16. Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime

    Article • Materials Science Forum, September 2025, Trans Tech Publications

    Dr. Mathias Rommel

  17. Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K

    Article • IEEE Sensors Letters, March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  18. Performance Investigation of 4H-SiC PIN Photodiodes With Dual Emitter Designs for Enhanced UV-C Detection

    Article • IEEE Sensors Letters, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  19. Second-Order Effects on 4H-SiC Lateral MOSFETs Characteristics up to 773 K

    Article • IEEE Transactions on Electron Devices, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  20. Uniformity and Repeatability of the Electrical Performance of 4H-SiC Lateral CMOS Devices and Circuits After Postprocessing Annealing

    Article • IEEE Transactions on Electron Devices, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  21. Spectro‐Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials

    Article • Advanced Optical Materials, December 2024, Wiley

    Dr. Mathias Rommel

  22. A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K

    Article • IEEE Electron Device Letters, November 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  23. Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications

    Article • Applied Sciences, October 2024, MDPI AG

    Dr. Mathias Rommel

  24. Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

    Article • IEEE Transactions on Electron Devices, October 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  25. Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C

    Article • Journal of Microelectronics and Electronic Packaging, October 2024, International Microelectronics and Packaging Society (IMAPS)

    Dr. Mathias Rommel

  26. Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  27. Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications

    Article • Key Engineering Materials, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  28. Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  29. Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  30. Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  31. Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  32. Temperature Dependence of 4H-SiC Gate Oxide Breakdown and <i>C</i>-<i>V</i> Properties from Room Temperature to 500 °C

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Dr. Mathias Rommel

  33. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations

    Article • IEEE Electron Device Letters, August 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  34. Novel Rapid and Deposition-Free Strategy for FIB Cross-Section Preparation

    Article • July 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  35. Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

    Article • Journal of Raman Spectroscopy, May 2024, Wiley

    Dr. Mathias Rommel

  36. Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications

    Article • May 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  37. A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  38. An analog to digital converter in a SiC CMOS technology for high-temperature applications

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Dr. Mathias Rommel

  39. SiC CMOS Gate Driver for High-Temperature Aerospace Applications

    Article • March 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  40. Defects distribution and evolution in selected-area helium ion implanted 4H–SiC

    Article • Ceramics International, March 2024, Elsevier

    Dr. Mathias Rommel

  41. A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K

    Article • Sensors, December 2023, MDPI AG

    Dr. Mathias Rommel, Gian Domenico Licciardo

  42. 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design

    Article • November 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  43. Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

    Article • October 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  44. Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices

    Article • Microfluidics and Nanofluidics, October 2023, Springer Science + Business Media

    Dr. Mathias Rommel

  45. Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials

    Article • Small Methods, July 2023, Wiley

    Dr. Mathias Rommel

  46. Intragranular thermal fatigue of Cu thin films: Near-grain boundary hardening, strain localization and voiding

    Article • Acta Materialia, July 2023, Elsevier

    Dr. Mathias Rommel

  47. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions

    Article • June 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  48. Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material

    Article • Key Engineering Materials, May 2023, Trans Tech Publications

    Dr. Mathias Rommel

  49. On the interpretation of confocal spectral depth profiling of color center and carrier concentration by photoluminescence and Raman of implanted 4H–SiC

    Article • Ceramics International, May 2023, Elsevier

    Dr. Mathias Rommel

  50. Unconventional conductivity increase in multilayer black phosphorus

    Article • npj 2D Materials and Applications, March 2023, Springer Science + Business Media

    Dr. Mathias Rommel

  51. CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

    Article • Semiconductor Science and Technology, March 2023, Institute of Physics Publishing

    Dr. Mathias Rommel

  52. Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation

    Article • Microfluidics and Nanofluidics, November 2022, Springer Science + Business Media

    Dr. Mathias Rommel

  53. CMOS compatible manufacturing of a hybrid SET-FET circuit

    Article • Semiconductor Science and Technology, November 2022, Institute of Physics Publishing

    Dr. Mathias Rommel

  54. A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

    Article • Materials Science Forum, May 2022, Trans Tech Publications

    Dr. Mathias Rommel

  55. Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

    Article • Materials Science Forum, May 2022, Trans Tech Publications

    Dr. Mathias Rommel

  56. Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC

    Article • Materials Science Forum, May 2022, Trans Tech Publications

    Dr. Mathias Rommel

  57. Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

    Article • Materials, December 2021, MDPI AG

    Dr. Mathias Rommel

  58. MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation

    Article • Journal of Nuclear Materials, December 2021, Elsevier

    Dr. Mathias Rommel

  59. Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

    Article • Ceramics International, September 2021, Elsevier

    Dr. Mathias Rommel

  60. Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

    Article • Journal of Crystal Growth, April 2021, Elsevier

    Jochen Friedrich, Dr. Mathias Rommel

  61. MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

    Article • Journal of Materials Chemistry C, January 2021, Royal Society of Chemistry

    Dr. Mathias Rommel

  62. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

    Article • Nanotechnology and Precision Engineering, December 2020, American Institute of Physics

    Dr. Mathias Rommel

  63. Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide

    Article • Nanotechnology and Precision Engineering, December 2020, American Institute of Physics

    Dr. Mathias Rommel

  64. Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

    Article • Micro and Nano Engineering, November 2020, Elsevier

    Dr. Mathias Rommel

  65. Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers

    Article • Optics Letters, September 2020, Optical Society of America (OSA)

    Dr. Mathias Rommel

  66. Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

    Article • Nanomanufacturing and Metrology, September 2020, Springer Science + Business Media

    Dr. Mathias Rommel

  67. Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy

    Article • Scientific Reports, August 2020, Springer Science + Business Media

    Dr. Mathias Rommel

  68. Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Dr. Mathias Rommel

  69. Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Dr. Mathias Rommel

  70. Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping

    Article • Materials Science Forum, July 2020, Trans Tech Publications

    Dr. Mathias Rommel

  71. Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

    Article • Crystals, February 2020, MDPI AG

    Dr. Mathias Rommel

  72. Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

    Article • The International Journal of Advanced Manufacturing Technology, January 2020, Springer Science + Business Media

    Dr. Mathias Rommel

  73. Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect

    Article • Crystals, August 2019, MDPI AG

    Dr. Mathias Rommel

  74. Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

    Article • Journal of Applied Physics, July 2019, American Institute of Physics

    Dr. Mathias Rommel, Jochen Friedrich

  75. Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Mathias Rommel

  76. Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Mathias Rommel

  77. Raman Spectroscopy Characterization of Ion Implanted 4H-SiC

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Mathias Rommel

  78. Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy

    Article • The Journal of Physical Chemistry C, March 2019, American Chemical Society (ACS)

    Dr. Mathias Rommel

  79. Laser Surface Microstructuring of a Bio-Resorbable Polymer to Anchor Stem Cells, Control Adipocyte Morphology, and Promote Osteogenesis

    Article • Polymers, December 2018, MDPI AG

    Dr. Mathias Rommel

  80. Normalized differential conductance to study current conduction mechanisms in MOS structures

    Article • Microelectronics Reliability, December 2018, Elsevier

    Dr. Mathias Rommel

  81. On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials

    Article • Advanced Functional Materials, November 2018, Wiley

    Dr. Mathias Rommel

  82. One-step nanoimprinted Bragg grating sensor based on hybrid polymers

    Article • Sensors and Actuators A Physical, September 2018, Elsevier

    Dr. Mathias Rommel

  83. Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  84. Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  85. Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

    Article • Journal of Micromanufacturing, August 2018, SAGE Publications

    Dr. Mathias Rommel

  86. Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

    Article • Micromachines, July 2018, MDPI AG

    Dr. Mathias Rommel

  87. Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  88. Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Mathias Rommel

  89. Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Mathias Rommel

  90. Flexible thin film bending sensor based on Bragg gratings in hybrid polymers

    Article • May 2018, SPIE

    Dr. Mathias Rommel

  91. Nano- and Micro-Patterned S-, H-, and X-PDMS for Cell-Based Applications: Comparison of Wettability, Roughness, and Cell-Derived Parameters

    Article • Frontiers in Bioengineering and Biotechnology, May 2018, Frontiers

    Dr. Mathias Rommel

  92. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

    Article • Journal of Applied Physics, March 2018, American Institute of Physics

    Dr. Mathias Rommel

  93. Novel approach based on continuous trench modelling to predict focused ion beam prepared freeform surfaces

    Article • Journal of Materials Processing Technology, February 2018, Elsevier

    Dr. Mathias Rommel

  94. TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing

    Article • Journal of Optics, December 2017, Institute of Physics Publishing

    Dr. Mathias Rommel

  95. Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity

    Article • Journal of Applied Physics, December 2017, American Institute of Physics

    Dr. Mathias Rommel

  96. Polymerization related deformations in multilayer soft stamps for nanoimprint

    Article • Journal of Applied Physics, October 2017, American Institute of Physics

    Dr. Mathias Rommel

  97. Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing

    Article • Sensors, October 2017, MDPI AG

    Dr. Mathias Rommel

  98. 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Mathias Rommel, Mr Jonas Buettner

  99. Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Mathias Rommel

  100. Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques

    Article • Microelectronic Engineering, May 2017, Elsevier

    Dr. Mathias Rommel

  101. Large area manufacturing of plasmonic colour filters using substrate conformal imprint lithography

    Article • Nano Futures, April 2017, Institute of Physics Publishing

    Dr. Mathias Rommel

  102. Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides

    Article • February 2017, SPIE

    Dr. Mathias Rommel

  103. Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers

    Article • Applied Physics Letters, January 2017, American Institute of Physics

    Dr. Mathias Rommel

  104. Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication

    Article • October 2016, SPIE

    Dr. Mathias Rommel

  105. Waveguide Bragg gratings in Ormocer hybrid polymers

    Article • Optics Express, June 2016, Optical Society of America (OSA)

    Dr. Mathias Rommel

  106. Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  107. Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings

    Article • Applied Physics A, March 2016, Springer Science + Business Media

    Dr. Mathias Rommel

  108. Comparison of silicon and 4H silicon carbide patterning using focused ion beams

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, December 2015, Elsevier

    Dr. Mathias Rommel

  109. A DLTS study of hydrogen doped czochralski-grown silicon

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, December 2015, Elsevier

    Dr. Mathias Rommel

  110. Metastable Defects in Proton Implanted and Annealed Silicon

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Dr. Mathias Rommel

  111. Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Dr. Mathias Rommel

  112. The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Dr. Mathias Rommel

  113. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    Article • Scientific Reports, August 2015, Nature

    Dr. Mathias Rommel

  114. Tailoring the Electrical Properties of HfO 2 MOS-Devices by Aluminum Doping

    Article • ACS Applied Materials & Interfaces, August 2015, American Chemical Society (ACS)

    Dr. Mathias Rommel

  115. Current conduction mechanism of MIS devices using multidimensional minimization system program

    Article • Microelectronics Reliability, June 2015, Elsevier

    Dr. Mathias Rommel

  116. Modelling of the electrochemical etch stop with high reverse bias across pn-junctions

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  117. Optical polymers with tunable refractive index for nanoimprint technologies

    Article • Nanotechnology, November 2014, Institute of Physics Publishing

    Dr. Mathias Rommel

  118. Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography

    Article • Journal of Micro/Nanolithography MEMS and MOEMS, October 2014, SPIE

    Dr. Mathias Rommel

  119. DLTS characterization of proton-implanted silicon under varying annealing conditions

    Article • physica status solidi (b), September 2014, Wiley

    Dr. Mathias Rommel

  120. A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime

    Article • ECS Transactions, August 2014, The Electrochemical Society

    Dr. Mathias Rommel

  121. Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon

    Article • ECS Transactions, August 2014, The Electrochemical Society

    Dr. Mathias Rommel

  122. Bioactivation of Plane and Patterned PDMS Thin Films by Wettability Engineering

    Article • BioNanoScience, August 2014, Springer Science + Business Media

    Dr. Mathias Rommel

  123. MeV-proton channeling in crystalline silicon

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  124. Enabling large area and high throughput roll-to-roll NIL by novel inkjetable and photo-curable NIL resists

    Article • March 2014, SPIE

    Dr. Mathias Rommel

  125. Nanoscale Characterization of TiO 2 Films Grown by Atomic Layer Deposition on RuO 2 Electrodes

    Article • ACS Applied Materials & Interfaces, February 2014, American Chemical Society (ACS)

    Dr. Mathias Rommel, Aarne Kasikov

  126. Thickness mapping of high-κ dielectrics at the nanoscale

    Article • Applied Physics Letters, February 2014, American Institute of Physics

    Dr. Mathias Rommel

  127. HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  128. Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr. Mathias Rommel

  129. Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching

    Article • Microelectronic Engineering, October 2013, Elsevier

    Dr. Mathias Rommel

  130. Functional epoxy polymer for direct nano-imprinting of micro-optical elements

    Article • Microelectronic Engineering, October 2013, Elsevier

    Dr. Mathias Rommel

  131. Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel

  132. Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries

    Article • Microelectronic Engineering, September 2013, Elsevier

    Dr. Mathias Rommel

  133. Evaluation of resistless Ga + beam lithography for UV NIL stamp fabrication

    Article • Nanotechnology, August 2013, Institute of Physics Publishing

    Dr. Mathias Rommel

  134. TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Dr. Mathias Rommel

  135. Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2013, American Vacuum Society

    Dr. Mathias Rommel

  136. Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  137. Accuracy of wafer level alignment with substrate conformal imprint lithography

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2013, American Vacuum Society

    Dr. Mathias Rommel

  138. Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures

    Article • Microelectronic Engineering, October 2012, Elsevier

    Dr. Mathias Rommel

  139. Novel organic polymer for UV-enhanced substrate conformal imprint lithography

    Article • Microelectronic Engineering, October 2012, Elsevier

    Dr. Mathias Rommel

  140. Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography

    Article • Microelectronic Engineering, October 2012, Elsevier

    Dr. Mathias Rommel

  141. Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy

    Article • Journal of Applied Physics, August 2012, American Institute of Physics

    Dr. Mathias Rommel

  142. All electrochemical layer deposition for crystalline silicon solar cell manufacturing: Experiments and interpretation

    Article • Solar Energy, January 2012, Elsevier

    Dr. Mathias Rommel

  143. Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy

    Article • September 2011, SPIE

    Dr. Mathias Rommel

  144. A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers

    Article • Journal of Applied Physics, September 2011, American Institute of Physics

    Dr. Mathias Rommel

  145. Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy

    Article • Microelectronic Engineering, August 2011, Elsevier

    Dr. Mathias Rommel

  146. Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress

    Article • January 2011, American Vacuum Society

    Dr. Mathias Rommel

  147. Electrical Characterization of Nanostructured p-Silicon Electrodes for Bioimpedance Measurements on Single Cell Level

    Article • January 2011, Springer Science + Business Media

    Dr. Mathias Rommel

  148. Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy

    Article • January 2011, American Institute of Physics

    Dr. Mathias Rommel

  149. Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy

    Article • January 2011, American Vacuum Society

    Dr. Mathias Rommel

  150. Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr. Mathias Rommel

  151. Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr. Mathias Rommel

  152. Guided phase separation of polymer blend thin films on ion beam-induced pre-patterned substrates

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr. Mathias Rommel

  153. Full wafer microlens replication by UV imprint lithography

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr. Mathias Rommel

  154. Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr. Mathias Rommel

  155. (Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers

    Article • January 2010, The Electrochemical Society

    Dr. Mathias Rommel

  156. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

    Article • January 2010, American Vacuum Society

    Dr. Mathias Rommel

  157. Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale

    Article • Microelectronic Engineering, July 2009, Elsevier

    Dr. Mathias Rommel

  158. UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

    Article • Microelectronic Engineering, April 2009, Elsevier

    Dr. Mathias Rommel

  159. Experimental observation of FIB induced lateral damage on silicon samples

    Article • Microelectronic Engineering, April 2009, Elsevier

    Dr. Mathias Rommel

  160. Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSi[sub x]O[sub 2−x] thin films using tunneling atomic force microscopy

    Article • January 2009, American Vacuum Society

    Dr. Mathias Rommel

  161. Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy

    Article • Journal of Applied Physics, July 2008, American Institute of Physics

    Dr. Mathias Rommel

  162. Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

    Article • Applied Physics Letters, June 2008, American Institute of Physics

    Dr. Mathias Rommel

  163. Recent improvements in the integration of field emitters into scanning probe microscopy sensors

    Article • Microelectronic Engineering, May 2008, Elsevier

    Dr. Mathias Rommel

  164. Custom-specific UV nanoimprint templates and life-time of antisticking layers

    Article • Microelectronic Engineering, May 2008, Elsevier

    Dr. Mathias Rommel

  165. SSRM characterisation of FIB induced damage in silicon

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Dr. Mathias Rommel

  166. Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement

    Article • Journal of The Electrochemical Society, January 2008, The Electrochemical Society

    Dr. Mathias Rommel

  167. Accurate parameter extraction for the simulation of direct structuring by ion beams

    Article • Microelectronic Engineering, May 2007, Elsevier

    Dr. Mathias Rommel

  168. Quantitative oxide charge determination by photocurrent analysis

    Article • Microelectronics Reliability, April 2007, Elsevier

    Dr. Mathias Rommel

  169. UV nanoimprint materials: Surface energies, residual layers, and imprint quality

    Article • January 2007, American Vacuum Society

    Dr. Mathias Rommel

  170. Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

    Article • January 2007, The Electrochemical Society

    Dr. Mathias Rommel

  171. Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers

    Article • Microelectronic Engineering, June 2005, Elsevier

    Dr. Mathias Rommel

  172. Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry

    Article • Spectrochimica Acta Part B Atomic Spectroscopy, November 2001, Elsevier

    Dr. Mathias Rommel

  173. The influence of the measurement environment on the accuracy of the extraction of the physical parameters of solar cells

    Article • Measurement Science and Technology, August 1999, Institute of Physics Publishing

    Dr. Mathias Rommel, Professor Ralph Gottschalg