All Stories

  1. Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy
  2. Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect
  3. Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
  4. Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
  5. Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
  6. Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
  7. Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy
  8. Laser Surface Microstructuring of a Bio-Resorbable Polymer to Anchor Stem Cells, Control Adipocyte Morphology, and Promote Osteogenesis
  9. Normalized differential conductance to study current conduction mechanisms in MOS structures
  10. One-step nanoimprinted Bragg grating sensor based on hybrid polymers
  11. Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC
  12. Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining
  13. Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
  14. Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC
  15. Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
  16. Flexible thin film bending sensor based on Bragg gratings in hybrid polymers
  17. Nano- and Micro-Patterned S-, H-, and X-PDMS for Cell-Based Applications: Comparison of Wettability, Roughness, and Cell-Derived Parameters
  18. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
  19. Novel approach based on continuous trench modelling to predict focused ion beam prepared freeform surfaces
  20. TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing
  21. Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity
  22. Polymerization related deformations in multilayer soft stamps for nanoimprint
  23. Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing
  24. 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
  25. Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
  26. Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques
  27. Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides
  28. Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers
  29. Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication
  30. Waveguide Bragg gratings in Ormocer hybrid polymers
  31. Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
  32. Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings
  33. Comparison of silicon and 4H silicon carbide patterning using focused ion beams
  34. A DLTS study of hydrogen doped czochralski-grown silicon
  35. Metastable Defects in Proton Implanted and Annealed Silicon
  36. Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques
  37. The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature
  38. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells
  39. Tailoring the Electrical Properties of HfO 2 MOS-Devices by Aluminum Doping
  40. Current conduction mechanism of MIS devices using multidimensional minimization system program
  41. Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
  42. Optical polymers with tunable refractive index for nanoimprint technologies
  43. Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography
  44. DLTS characterization of proton-implanted silicon under varying annealing conditions
  45. A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime
  46. Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon
  47. Bioactivation of Plane and Patterned PDMS Thin Films by Wettability Engineering
  48. MeV-proton channeling in crystalline silicon
  49. Enabling large area and high throughput roll-to-roll NIL by novel inkjetable and photo-curable NIL resists
  50. Nanoscale Characterization of TiO 2 Films Grown by Atomic Layer Deposition on RuO 2 Electrodes
  51. Thickness mapping of high-κ dielectrics at the nanoscale
  52. HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
  53. Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
  54. Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
  55. Functional epoxy polymer for direct nano-imprinting of micro-optical elements
  56. Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
  57. Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
  58. Evaluation of resistless Ga + beam lithography for UV NIL stamp fabrication
  59. TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors
  60. Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction
  61. Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
  62. Accuracy of wafer level alignment with substrate conformal imprint lithography
  63. Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
  64. Novel organic polymer for UV-enhanced substrate conformal imprint lithography
  65. Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
  66. Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
  67. All electrochemical layer deposition for crystalline silicon solar cell manufacturing: Experiments and interpretation
  68. Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy
  69. A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
  70. Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy
  71. Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
  72. Electrical Characterization of Nanostructured p-Silicon Electrodes for Bioimpedance Measurements on Single Cell Level
  73. Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy
  74. Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy
  75. Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
  76. Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations
  77. Guided phase separation of polymer blend thin films on ion beam-induced pre-patterned substrates
  78. Full wafer microlens replication by UV imprint lithography
  79. Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing
  80. (Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers
  81. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
  82. Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
  83. UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
  84. Experimental observation of FIB induced lateral damage on silicon samples
  85. Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSi[sub x]O[sub 2−x] thin films using tunneling atomic force microscopy
  86. Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy
  87. Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
  88. Recent improvements in the integration of field emitters into scanning probe microscopy sensors
  89. Custom-specific UV nanoimprint templates and life-time of antisticking layers
  90. SSRM characterisation of FIB induced damage in silicon
  91. Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement
  92. Accurate parameter extraction for the simulation of direct structuring by ion beams
  93. Quantitative oxide charge determination by photocurrent analysis
  94. UV nanoimprint materials: Surface energies, residual layers, and imprint quality
  95. Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement
  96. Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers
  97. Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry
  98. The influence of the measurement environment on the accuracy of the extraction of the physical parameters of solar cells