All Stories

  1. Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond

    Article • Journal of Crystal Growth, May 2023, Elsevier

    Jochen Friedrich

  2. Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide

    Article • Physical Review Applied, March 2023, American Physical Society (APS)

    Jochen Friedrich

  3. Microstructure and Mechanical Properties of Hypereutectic Al-High Si Alloys up to 70 wt.% Si-Content Produced from Pre-Alloyed and Blended Powder via Laser Powder Bed Fusion

    Article • Materials, January 2023, MDPI AG

    Jochen Friedrich

  4. Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals

    Article • Crystals, December 2022, MDPI AG

    Jochen Friedrich

  5. Investigation of Facetted Growth in Heavily Doped Silicon Crystals Grown in Mirror Furnaces

    Article • Crystals, November 2022, MDPI AG

    Jochen Friedrich

  6. Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors

    Article • Crystals, September 2022, MDPI AG

    Jochen Friedrich

  7. Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions

    Article • Applied Physics Express, August 2022, Institute of Physics Publishing

    Jochen Friedrich

  8. Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

    Article • Journal of Crystal Growth, December 2021, Elsevier

    Jochen Friedrich

  9. Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock

    Article • Journal of Crystal Growth, November 2021, Elsevier

    Jochen Friedrich

  10. Assessment of residual melt removal as approach to reduce the top redzone of cast silicon ingots

    Article • Journal of Crystal Growth, October 2021, Elsevier

    Jochen Friedrich

  11. High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste

    Article • ACS Applied Materials & Interfaces, September 2021, American Chemical Society (ACS)

    Jochen Friedrich

  12. Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals

    Article • Journal of Crystal Growth, September 2021, Elsevier

    Jochen Friedrich

  13. Facet growth and geometry of the growth ridge during dynamic Czochralski processes

    Article • Journal of Crystal Growth, August 2021, Elsevier

    Jochen Friedrich

  14. Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots

    Article • Journal of Crystal Growth, August 2021, Elsevier

    Jochen Friedrich

  15. A Low‐Cost Al‐Graphite Battery with Urea and Acetamide‐Based Electrolytes

    Article • ChemElectroChem, May 2021, Wiley

    Jochen Friedrich

  16. A Low‐Cost Al‐Graphite Battery with Urea and Acetamide‐Based Electrolytes

    Article • ChemElectroChem, May 2021, Wiley

    Jochen Friedrich

  17. Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

    Article • Journal of Crystal Growth, April 2021, Elsevier

    Jochen Friedrich

  18. Metal contamination of silicon from the furnace atmosphere after crystallization

    Article • Journal of Crystal Growth, April 2021, Elsevier

    Jochen Friedrich

  19. In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

    Article • Crystals, November 2020, MDPI AG

    Jochen Friedrich

  20. Stress evolution in thick GaN layers grown by HVPE

    Article • Journal of Crystal Growth, November 2020, Elsevier

    Jochen Friedrich

  21. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

    Article • Scientific Reports, October 2020, Springer Science + Business Media

    Jochen Friedrich

  22. Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application

    Article • Journal of Crystal Growth, June 2020, Elsevier

    Jochen Friedrich

  23. Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

    Article • AIP Advances, April 2020, American Institute of Physics

    Jochen Friedrich

  24. Investigation of gas bubble growth in fused silica crucibles for silicon Czochralski crystal growth

    Article • Journal of Crystal Growth, March 2020, Elsevier

    Jochen Friedrich

  25. Impact of different SiO2 diffusion barrier layers on lifetime distribution in multi-crystalline silicon ingots

    Article • Journal of Crystal Growth, February 2020, Elsevier

    Jochen Friedrich

  26. Vertical breakdown of GaN on Si due to V-pits

    Article • Journal of Applied Physics, January 2020, American Institute of Physics

    Jochen Friedrich

  27. Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications

    Article • Journal of Crystal Growth, October 2019, Elsevier

    Jochen Friedrich

  28. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

    Article • Crystal Research and Technology, September 2019, Wiley

    Jochen Friedrich

  29. Corrigendum to “Particle engulfment dynamics under oscillating crystal growth conditions” [J. Crystal Growth 468 (2017) 24–27]

    Article • Journal of Crystal Growth, September 2019, Elsevier

    Jochen Friedrich

  30. Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles

    Article • Journal of Crystal Growth, September 2019, Elsevier

    Jochen Friedrich

  31. Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

    Article • Journal of Applied Physics, July 2019, American Institute of Physics

    Dr. Mathias Rommel, Jochen Friedrich

  32. Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN

    Article • Journal of Crystal Growth, July 2019, Elsevier

    Jochen Friedrich

  33. Silicon Waste from the Photovoltaic Industry - A Material Source for the Next Generation Battery Technology?

    Article • Materials Science Forum, June 2019, Trans Tech Publications

    Jochen Friedrich

  34. Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

    Article • Journal of Crystal Growth, June 2019, Elsevier

    Jochen Friedrich

  35. Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots

    Article • Journal of Crystal Growth, May 2019, Elsevier

    Jochen Friedrich

  36. Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

    Article • Journal of Applied Physics, March 2019, American Institute of Physics

    Andreas Lesnik, Jochen Friedrich

  37. Thermoelectric properties of silicon and recycled silicon sawing waste

    Article • Journal of Materiomics, March 2019, Elsevier

    Jochen Friedrich

  38. Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  39. Optical Stressing of 4H-SiC Material and Devices

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Jochen Friedrich

  40. Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

    Article • Journal of Crystal Growth, June 2018, Elsevier

    Jochen Friedrich

  41. A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques

    Article • Materials, October 2017, MDPI AG

    Jochen Friedrich

  42. Engulfment and pushing of Si3N4 and SiC particles during directional solidification of silicon under microgravity conditions

    Article • Journal of Crystal Growth, October 2017, Elsevier

    Jochen Friedrich

  43. Particle engulfment dynamics under oscillating crystal growth conditions

    Article • Journal of Crystal Growth, June 2017, Elsevier

    Jochen Friedrich

  44. Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots

    Article • Journal of Crystal Growth, May 2017, Elsevier

    Jochen Friedrich

  45. Dislocation formation in heavily As-doped Czochralski grown silicon

    Article • Crystal Research and Technology, April 2017, Wiley

    Jochen Friedrich

  46. A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth

    Article • Journal of Crystal Growth, April 2017, Elsevier

    Jochen Friedrich

  47. Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots

    Article • Journal of Crystal Growth, February 2017, Elsevier

    Jochen Friedrich

  48. Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics

    Article • Microelectronics Reliability, November 2016, Elsevier

    Jochen Friedrich

  49. Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots

    Article • Journal of Crystal Growth, November 2016, Elsevier

    Jochen Friedrich

  50. Dynamic Modeling of Critical Velocities for the Pushing/Engulfment Transition in the Si-SiC System Under Gravity Conditions

    Article • Metallurgical and Materials Transactions A, October 2016, Springer Science + Business Media

    Jochen Friedrich

  51. Interaction of SiC particles with moving solid–liquid interface during directional solidification of silicon

    Article • Journal of Crystal Growth, August 2016, Elsevier

    Jochen Friedrich

  52. Phase-field simulations of particle capture during the directional solidification of silicon

    Article • Journal of Crystal Growth, July 2016, Elsevier

    Jochen Friedrich

  53. Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  54. Wetting and infiltration of nitride bonded silicon nitride by liquid silicon

    Article • Journal of Crystal Growth, April 2016, Elsevier

    Jochen Friedrich

  55. Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation

    Article • Acta Materialia, March 2016, Elsevier

    Jochen Friedrich

  56. Influence of different seed materials on multi-crystalline silicon ingot properties

    Article • Journal of Crystal Growth, January 2016, Elsevier

    Jochen Friedrich

  57. Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots

    Article • Journal of Crystal Growth, November 2015, Elsevier

    Jochen Friedrich

  58. Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Dr. Mohamed Elsayed, Jochen Friedrich

  59. Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Jochen Friedrich

  60. Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Jochen Friedrich

  61. Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

    Article • Journal of Crystal Growth, October 2015, Elsevier

    Jochen Friedrich

  62. Nitride bonded silicon nitride as a reusable crucible material for directional solidification of silicon

    Article • Crystal Research and Technology, September 2015, Wiley

    Jochen Friedrich

  63. Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon

    Article • Acta Materialia, July 2015, Elsevier

    Jochen Friedrich

  64. Guest Editors' Preface

    Article • Crystal Research and Technology, January 2015, Wiley

    Jochen Friedrich

  65. Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots

    Article • Journal of Crystal Growth, November 2014, Elsevier

    Jochen Friedrich

  66. Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes

    Article • Journal of Crystal Growth, October 2014, Elsevier

    Jochen Friedrich

  67. Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots

    Article • Crystal Research and Technology, August 2014, Wiley

    Jochen Friedrich

  68. Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods

    Article • Journal of Crystal Growth, June 2014, Elsevier

    Jochen Friedrich

  69. Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale

    Article • Acta Materialia, May 2014, Elsevier

    Jochen Friedrich

  70. HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  71. Comparative study of the luminescence of Al2O3:C and Al2O3 crystals under synchrotron radiation excitation

    Article • Journal of Luminescence, December 2013, Elsevier

    Jochen Friedrich

  72. Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

    Article • Journal of Applied Physics, November 2013, American Institute of Physics

    Jochen Friedrich

  73. Numerical parameter studies of 3D melt flow and interface shape for directional solidification of silicon in a traveling magnetic field

    Article • Journal of Crystal Growth, October 2013, Elsevier

    Jochen Friedrich

  74. Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

    Article • Journal of Crystal Growth, October 2013, Elsevier

    Jochen Friedrich

  75. Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

    Article • Acta Physica Polonica A, August 2013, Institute of Physics, Polish Academy of Sciences

    Jochen Friedrich

  76. Non-isothermal model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

    Article • Journal of Crystal Growth, June 2013, Elsevier

    Jochen Friedrich

  77. Combined global 2D–local 3D modeling of the industrial Czochralski silicon crystal growth process

    Article • Journal of Crystal Growth, April 2013, Elsevier

    Jochen Friedrich

  78. Unsteady coupled 3D calculations of melt flow, interface shape, and species transport for directional solidification of silicon in a traveling magnetic field

    Article • Journal of Crystal Growth, March 2013, Elsevier

    Jochen Friedrich

  79. Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr. Mathias Rommel, Jochen Friedrich

  80. SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Jochen Friedrich

  81. Systematic characterization of multi-crystalline silicon String Ribbon wafer

    Article • Journal of Crystal Growth, December 2012, Elsevier

    Jochen Friedrich

  82. Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon

    Article • Materials Science Forum, July 2012, Trans Tech Publications

    Jochen Friedrich

  83. Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals

    Article • Journal of Crystal Growth, July 2012, Elsevier

    Jochen Friedrich

  84. Doping induced lattice misfit in 4H–SiC homoepitaxy

    Article • Journal of Crystal Growth, June 2012, Elsevier

    Jochen Friedrich

  85. Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique

    Article • Journal of Crystal Growth, April 2012, Elsevier

    Jochen Friedrich

  86. Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

    Article • Journal of Crystal Growth, February 2012, Elsevier

    Jochen Friedrich

  87. Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field

    Article • Journal of Crystal Growth, October 2011, Elsevier

    Jochen Friedrich

  88. Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates

    Article • Journal of Crystal Growth, May 2011, Elsevier

    Jochen Friedrich

  89. 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Jochen Friedrich

  90. Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingots

    Article • Journal of Crystal Growth, March 2011, Elsevier

    Jochen Friedrich

  91. Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Jochen Friedrich

  92. Selective etching of dislocations in GaN grown by low-pressure solution growth

    Article • Journal of Crystal Growth, October 2010, Elsevier

    Jochen Friedrich

  93. Interactions of Dislocations during Epitaxial Growth of SiC and GaN

    Article • July 2010, Wiley

    Jochen Friedrich

  94. About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

    Article • Journal of Crystal Growth, April 2010, Elsevier

    Jochen Friedrich

  95. Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Jochen Friedrich

  96. The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon

    Article • Journal of Crystal Growth, April 2010, Elsevier

    Jochen Friedrich

  97. Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters

    Article • Journal of Crystal Growth, March 2010, Elsevier

    Jochen Friedrich

  98. Low Pressure Solution Growth of Gallium Nitride

    Article • January 2010, Springer Science + Business Media

    Jochen Friedrich

  99. Optimization and Modeling of Photovoltaic Silicon Crystallization Processes

    Article • January 2010, American Institute of Physics

    Jochen Friedrich

  100. Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Jochen Friedrich

  101. Influence of forced convection on the directional solidification of AlSi alloys: comparison of experiments and simulation

    Article • Progress in Computational Fluid Dynamics An International Journal, January 2009, Inderscience Publishers

    Jochen Friedrich

  102. On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN

    Article • Journal of Crystal Growth, December 2008, Elsevier

    Jochen Friedrich

  103. Numerical study on the prediction of microstructure parameters by multi-scale modeling of directional solidification of binary aluminum–silicon alloys

    Article • Computational Materials Science, October 2008, Elsevier

    Jochen Friedrich

  104. Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Jochen Friedrich

  105. Reduction of the dislocation density in GaN during low-pressure solution growth

    Article • Journal of Crystal Growth, July 2008, Elsevier

    Jochen Friedrich

  106. Crystal growth of compound semiconductors with low dislocation densities

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Jochen Friedrich

  107. The importance of convective heat and mass transfer for controlling material properties in ingot casting of multi-crystalline-silicon for photovoltaic applications

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Jochen Friedrich

  108. Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch

    Article • Journal of Crystal Growth, February 2008, Elsevier

    Jochen Friedrich

  109. Yield Improvement and Defect Control in Bridgman‐Type Crystal Growth with the Aid of Thermal Modeling

    Article • January 2008, Wiley

    Jochen Friedrich

  110. Simulation of dislocation density: Global modeling of bulk crystal growth by a quasi-steady approach of the Alexander–Haasen concept

    Article • Journal of Crystal Growth, January 2008, Elsevier

    Jochen Friedrich

  111. Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

    Article • Crystal Research and Technology, January 2008, Wiley

    Jochen Friedrich

  112. Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

    Article • Journal of Crystal Growth, July 2007, Elsevier

    Jochen Friedrich

  113. Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry

    Article • physica status solidi c, June 2007, Wiley

    Jochen Friedrich

  114. 3D time-dependent numerical study of the influence of the melt flow on the interface shape in a silicon ingot casting process

    Article • Journal of Crystal Growth, May 2007, Elsevier

    Jochen Friedrich

  115. A new hybrid method for the global modeling of convection in CZ crystal growth configurations

    Article • Journal of Crystal Growth, May 2007, Elsevier

    Jochen Friedrich

  116. Influence of different types of magnetic fields on the interface shape in a 200mm Si-EMCZ configuration

    Article • Journal of Crystal Growth, May 2007, Elsevier

    Jochen Friedrich

  117. Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN

    Article • Journal of Crystal Growth, December 2006, Elsevier

    Jochen Friedrich

  118. Large modification of crystal–melt interface shape during Si crystal growth by using electromagnetic Czochralski method (EMCZ)

    Article • Journal of Crystal Growth, July 2006, Elsevier

    Jochen Friedrich

  119. Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia

    Article • Journal of Crystal Growth, July 2006, Elsevier

    Jochen Friedrich

  120. Simulation of ESA's msl Furnace Inserts and Sample-Cartridge Assemblies Using the Thermal Modeling Tool Crysvun

    Article • March 2006, CrossRef Test Account

    Jochen Friedrich

  121. Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements

    Article • physica status solidi c, March 2006, Wiley

    Jochen Friedrich

  122. Simulation of ESA’s MSL Furnace Inserts and Sample-Cartridge Assemblies: Model Development and Correlation with Experimental Data

    Article • July 2005, SAE International

    Jochen Friedrich

  123. Characterisation of GaN crystals and epilayers grown from a solution at room pressure

    Article • April 2005, Wiley

    Jochen Friedrich

  124. Modeling of industrial bulk crystal growth—state of the art and challenges

    Article • Journal of Crystal Growth, February 2005, Elsevier

    Jochen Friedrich

  125. Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Jochen Friedrich

  126. Study of the oxygen incorporation during growth of large CaF2-crystals

    Article • Journal of Crystal Growth, January 2005, Elsevier

    Jochen Friedrich

  127. A matrix based correction scheme of the liquid fraction during columnar solidification

    Article • International Journal of Heat and Mass Transfer, June 2004, Elsevier

    Jochen Friedrich

  128. Challenges in modeling of bulk crystal growth

    Article • Journal of Crystal Growth, May 2004, Elsevier

    Jochen Friedrich

  129. Comparative numerical study of the effects of rotating and travelling magnetic fields on the interface shape and thermal stress in the VGF growth of InP crystals

    Article • Journal of Crystal Growth, May 2004, Elsevier

    Jochen Friedrich

  130. Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs

    Article • Journal of Crystal Growth, May 2004, Elsevier

    Jochen Friedrich

  131. Numerical study on directional solidification of AlSi alloys with rotating magnetic fields under microgravity conditions

    Article • Journal of Materials Science, March 2004, Springer Science + Business Media

    Jochen Friedrich

  132. Numerical study of the effects of rotating magnetic fields during VGF growth of 3'' GaAs crystals

    Article • Magnetohydrodynamics, December 2003, University of Latvia

    Jochen Friedrich

  133. 3D numerical simulation of Rayleigh-Bénard convection in an electrically conducting melt acted on by a travelling magnetic field

    Article • Magnetohydrodynamics, June 2003, University of Latvia

    Jochen Friedrich

  134. Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal

    Article • Materials Science in Semiconductor Processing, August 2002, Elsevier

    Jochen Friedrich

  135. Experimental Verification of the Numerical Model for a CaF2 Crystal Growth Process

    Article • Crystal Research and Technology, February 2002, Wiley

    Jochen Friedrich

  136. Numerical simulation of formation of grain structure and global heat transport during solidification of technical alloys in MSL inserts

    Article • Advances in Space Research, January 2002, Elsevier

    Jochen Friedrich

  137. Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields

    Article • Journal of Crystal Growth, August 2001, Elsevier

    Jochen Friedrich

  138. On void engulfment in shaped sapphire crystals using 3D modelling

    Article • Journal of Crystal Growth, September 2000, Elsevier

    Jochen Friedrich

  139. Optical cross-sections and distribution of Fe2+ and Fe3+ in semi-insulating liquid encapsulated Czochralski grown InP:Fe

    Article • Materials Science and Engineering B, November 1993, Elsevier

    Jochen Friedrich