All Stories

  1. Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer

    Article • IEEE Transactions on Magnetics, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  2. Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers

    Article • IEEE Transactions on Magnetics, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  3. Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

    Article • IEEE Transactions on Magnetics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  4. Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

    Article • AIP Advances, February 2021, American Institute of Physics

    Dr. Hiroaki Honjo

  5. Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

    Article • AIP Advances, February 2021, American Institute of Physics

    Koichi Nishioka, Dr. Hiroaki Honjo

  6. Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2020, American Vacuum Society

    Dr. Hiroaki Honjo

  7. Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  8. 40-nm 1T-1MTJ 128Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  9. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  10. Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  11. Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

    Article • AIP Advances, December 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  12. Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions

    Article • Journal of Applied Physics, September 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  13. Increasing the thermal tolerance of reference layer for STT-MRAM manufacturing

    Article • Scilight, September 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  14. Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Dr. Hiroaki Honjo, Akira Yasui

  15. A Recent Progress of Spintronics Devices for Integrated Circuit Applications

    Article • Journal of Low Power Electronics and Applications, November 2018, MDPI AG

    Dr. Hiroaki Honjo

  16. 1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  17. Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ

    Article • IEEE Transactions on Magnetics, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  18. A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

    Article • Japanese Journal of Applied Physics, March 2017, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  19. Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  20. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  21. Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  22. Erratum: “Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing” [Appl. Phys. Lett. 106, 142407 (2015)]

    Article • Applied Physics Letters, June 2015, American Institute of Physics

    Dr. Hiroaki Honjo

  23. 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  24. Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  25. Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  26. Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

    Article • IEEE Transactions on Magnetics, November 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  27. Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

    Article • Japanese Journal of Applied Physics, September 2014, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  28. A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  29. 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

    Article • February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  30. Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  31. Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr. Hiroaki Honjo

  32. Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr. Hiroaki Honjo

  33. Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

    Article • Japanese Journal of Applied Physics, August 2012, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  34. Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

    Article • Japanese Journal of Applied Physics, August 2012, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  35. High-speed simulator including accurate MTJ models for spintronics integrated circuit design

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  36. A 500-MHz MRAM macro for high-performance SoCs

    Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  37. Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, April 2008, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  38. A 16-Mb Toggle MRAM With Burst Modes

    Article • IEEE Journal of Solid-State Circuits, November 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  39. A 250-MHz 1-Mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture

    Article • November 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  40. Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD

    Article • January 2007, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  41. A 16Mb toggle MRAM with burst modes

    Article • November 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  42. Determination of the proton tunneling splitting of tropolone in the ground state by microwave spectroscopy

    Article • The Journal of Chemical Physics, January 1999, American Institute of Physics

    Dr. Hiroaki Honjo