All Stories

  1. Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer

    Article • IEEE Transactions on Magnetics, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  2. Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers

    Article • IEEE Transactions on Magnetics, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  3. Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

    Article • IEEE Transactions on Magnetics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  4. First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

    Article • IEEE Transactions on Electron Devices, June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  5. Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition

    Article • IEEE Journal of Solid-State Circuits, April 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  6. Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

    Article • AIP Advances, February 2021, American Institute of Physics

    Dr. Hiroaki Honjo

  7. Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

    Article • AIP Advances, February 2021, American Institute of Physics

    Koichi Nishioka, Dr. Hiroaki Honjo, Professor Xu Zuo

  8. Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice

    Article • August 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  9. Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  10. Scalability of Quad Interface p-MTJ for 1× nm STT-MRAM with 10 ns Low Power Write Operation, 10 Years Retention and Endurance > 1011

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  11. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  12. Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2020, American Vacuum Society

    Dr. Hiroaki Honjo

  13. A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching

    Article • Japanese Journal of Applied Physics, March 2020, Institute of Physics Publishing

    Dr. Hiroaki Honjo

  14. Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm

    Article • IEEE Transactions on Electron Devices, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  15. Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  16. 40-nm 1T-1MTJ 128Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  17. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  18. Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography

    Article • IEEE Transactions on Magnetics, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  19. Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

    Article • AIP Advances, December 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  20. A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

    Article • IEEE Journal of Solid-State Circuits, November 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  21. Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions

    Article • Journal of Applied Physics, September 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  22. Increasing the thermal tolerance of reference layer for STT-MRAM manufacturing

    Article • Scilight, September 2019, American Institute of Physics

    Dr. Hiroaki Honjo

  23. Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

    Article • IEEE Transactions on Magnetics, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  24. Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  25. Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Dr. Hiroaki Honjo, Akira Yasui

  26. Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction

    Article • IEEE Transactions on Magnetics, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  27. A Recent Progress of Spintronics Devices for Integrated Circuit Applications

    Article • Journal of Low Power Electronics and Applications, November 2018, MDPI AG

    Dr. Hiroaki Honjo

  28. STEM tomography study on structural features induced by MTJ processing

    Article • Applied Physics A, October 2018, Springer Science + Business Media

    Dr. Hiroaki Honjo

  29. 1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  30. Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ

    Article • IEEE Transactions on Magnetics, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  31. High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions

    Article • April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  32. Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer

    Article • IEEE Transactions on Magnetics, November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  33. A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

    Article • Japanese Journal of Applied Physics, March 2017, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  34. Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

    Article • AIP Advances, January 2017, American Institute of Physics

    Dr. Hiroaki Honjo

  35. Impact of the Level of Anastomosis on Reflux Esophagitis Following Esophagectomy with Gastric Tube Reconstruction

    Article • Extremophiles, October 2016, Wiley

    Dr. Hiroaki Honjo

  36. Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition

    Article • IEEE Transactions on Magnetics, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  37. Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  38. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  39. Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  40. Erratum: “Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing” [Appl. Phys. Lett. 106, 142407 (2015)]

    Article • Applied Physics Letters, June 2015, American Institute of Physics

    Dr. Hiroaki Honjo

  41. 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  42. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

    Article • Applied Physics Letters, April 2015, American Institute of Physics

    Dr. Hiroaki Honjo

  43. Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  44. Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  45. Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

    Article • IEEE Journal of Solid-State Circuits, February 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  46. Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

    Article • IEEE Transactions on Magnetics, November 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  47. Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

    Article • Japanese Journal of Applied Physics, September 2014, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  48. A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  49. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Dr. Hiroaki Honjo

  50. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Dr. Hiroaki Honjo

  51. 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

    Article • February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  52. Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  53. Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr. Hiroaki Honjo

  54. Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Dr. Hiroaki Honjo

  55. Electrical endurance of Co/Ni wire for magnetic domain wall motion device

    Article • Applied Physics Letters, June 2013, American Institute of Physics

    Dr. Hiroaki Honjo

  56. A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme

    Article • IEEE Journal of Solid-State Circuits, June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  57. Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

    Article • February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  58. Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications

    Article • IEICE Electronics Express, January 2013, Institute of Electronics, Information and Communications Engineers (IEICE)

    Dr. Hiroaki Honjo

  59. Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

    Article • Japanese Journal of Applied Physics, August 2012, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  60. Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

    Article • Japanese Journal of Applied Physics, August 2012, Japan Society of Applied Physics

    Dr Keizo Kinoshita, Dr. Hiroaki Honjo

  61. High-speed simulator including accurate MTJ models for spintronics integrated circuit design

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  62. Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

    Article • Journal of Applied Physics, March 2012, American Institute of Physics

    Dr. Hiroaki Honjo

  63. Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

    Article • Journal of Applied Physics, February 2012, American Institute of Physics

    Dr. Hiroaki Honjo

  64. Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs

    Article • IEEE Transactions on Magnetics, October 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  65. A 500-MHz MRAM macro for high-performance SoCs

    Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  66. Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, April 2008, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  67. A 16-Mb Toggle MRAM With Burst Modes

    Article • IEEE Journal of Solid-State Circuits, November 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  68. A 250-MHz 1-Mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture

    Article • November 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  69. Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

    Article • IEEE Transactions on Magnetics, August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  70. MRAM Cell Technology for Over 500-MHz SoC

    Article • IEEE Journal of Solid-State Circuits, April 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  71. Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD

    Article • January 2007, Japan Society of Applied Physics

    Dr. Hiroaki Honjo

  72. A 16Mb toggle MRAM with burst modes

    Article • November 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  73. Large Exchange Coupling in Synthetic Antiferromagnet With Ultrathin Seed Layer

    Article • IEEE Transactions on Magnetics, October 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Hiroaki Honjo

  74. Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio

    Article • Journal of Applied Physics, April 2006, American Institute of Physics

    Dr. Hiroaki Honjo

  75. Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

    Article • Journal of Applied Physics, April 2006, American Institute of Physics

    Dr. Hiroaki Honjo

  76. Determination of the proton tunneling splitting of tropolone in the ground state by microwave spectroscopy

    Article • The Journal of Chemical Physics, January 1999, American Institute of Physics

    Dr. Hiroaki Honjo