Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface

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This study investigated the influence of hard mask materials on tunnel magnetoresistance (TMR) properties and magnetic properties for the perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with double CoFeB/MgO interface annealed at 400°C for 0.5 h to 10 h. We believe that our study makes a significant contribution to the literature because ours is the first study to investigate the effects of hard mask materials on MTJs properties, which would be beneficial in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology.

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