All Stories

  1. Contact resistance at graphene/MoS2 lateral heterostructures

    Article • Applied Physics Letters, April 2019, American Institute of Physics

    Afanas'ev Valeri, Michel Houssa, Dr. Anh Khoa Augustin Lu, Andre Stesmans

  2. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

    Article • Applied Physics Reviews, March 2019, American Institute of Physics

    Sean King, Afanas'ev Valeri

  3. Internal Versus External Photoemission

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  4. Internal Photoemission Spectroscopy Methods

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  5. Photoemission into Insulators

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  6. Preliminary Remarks and Historical Overview

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  7. Silicon–Insulator Interface Barriers

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  8. Injection Spectroscopy of Thin Layers of Solids

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  9. Analysis of the Charge Trapping Kinetics

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  10. Barriers at Interfaces of High-Mobility and Compound Semiconductors

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  11. Electron Energy Barriers Between Conducting Materials and Insulating Oxides

    Article • January 2014, Elsevier

    Afanas'ev Valeri

  12. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Article • Advances in Condensed Matter Physics, January 2014, Hindawi Publishing Corporation

    Afanas'ev Valeri

  13. (Invited) Electron Band Alignment at Ge/Oxide and AIII-BV/Oxide Interfaces from Internal Photoemission Experiments

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Afanas'ev Valeri

  14. Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112, 064115 (2012)]

    Article • Journal of Applied Physics, April 2013, American Institute of Physics

    Afanas'ev Valeri

  15. Internal Photoemission at Interaces of ALD TaiOxInsulating Layers Deposited on Si, InP and In0.53Ga0.47As

    Article • IOP Conference Series Materials Science and Engineering, December 2012, Institute of Physics Publishing

    Afanas'ev Valeri

  16. Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    Article • Applied Physics Letters, August 2011, American Institute of Physics

    Afanas'ev Valeri

  17. Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

    Article • Microelectronic Engineering, July 2011, Elsevier

    Afanas'ev Valeri

  18. Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Im...

    Article • IEEE Transactions on Electron Devices, November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Afanas'ev Valeri

  19. Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators

    Article • Journal of Applied Physics, October 2008, American Institute of Physics

    Afanas'ev Valeri

  20. ESR of interfaces and nanolayers in semiconductor heterostructures

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  21. Internal Versus External Photoemission

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  22. Internal Photoemission Spectroscopy Methods

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  23. Conclusions

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  24. Preliminary Remarks and Historical Overview

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  25. Injection Spectroscopy of Thin Layers of Solids

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  26. Trapped Charge Monitoring and Characterization

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  27. Transport Effects in Charge Trapping

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  28. Semiconductor-Insulator Interface Barriers

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  29. Model Description and Experimental Realization of IPE

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  30. Charge Trapping Kinetics in Injection-Limited Current Regime

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  31. Electron Energy Barriers between Conducting and Insulating Materials

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  32. Spectroscopy of Charge Traps in Thin Insulating SiO2 Layers

    Article • January 2008, Elsevier

    Afanas'ev Valeri

  33. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

    Article • Journal of Applied Physics, October 2007, American Institute of Physics

    Afanas'ev Valeri

  34. Internal photoemission of electrons at interfaces of metals with low-κ insulators

    Article • Applied Physics Letters, November 2006, American Institute of Physics

    Afanas'ev Valeri

  35. Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2

    Article • Microelectronics Reliability, May 2005, Elsevier

    Afanas'ev Valeri

  36. Polytype determination at the SiC–SiO2 interface by internal electron photoemission scattering spectroscopy

    Article • Materials Science and Engineering B, September 2003, Elsevier

    Afanas'ev Valeri

  37. Determination of interface energy band diagram between (100)Si and mixed Al–Hf oxides using internal electron photoemission

    Article • Applied Physics Letters, January 2003, American Institute of Physics

    Afanas'ev Valeri

  38. Internal photoemission of electrons and holes from (100)Si into HfO2

    Article • Applied Physics Letters, August 2002, American Institute of Physics

    Afanas'ev Valeri

  39. Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

    Article • Microelectronic Engineering, November 2001, Elsevier

    Afanas'ev Valeri

  40. SiC/SiO2 Interface States

    Article • phys stat sol (a), July 1997, Wiley

    Afanas'ev Valeri

  41. Internal photoemission spectroscopy of semiconductor-insulator interfaces

    Article • Progress in Surface Science, October 1992, Elsevier

    Afanas'ev Valeri

  42. Photocharging Technique for Barrier Determination on Semiconductor-Insulator Interfaces

    Article • phys stat sol (a), August 1992, Wiley

    Afanas'ev Valeri

  43. Electron Trap Activation in Thermal SiO2

    Article • phys stat sol (a), November 1990, Wiley

    Afanas'ev Valeri

  44. Electrical properties of buried oxide layers of low dose SIMOX structures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Afanas'ev Valeri