Intrinsic SiC/SiO2 Interface States

V. V. Afanasev, M. Bassler, G. Pensl, M. Schulz
  • physica status solidi (a), July 1997, Wiley
  • DOI: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>;2-f

SiC/SiO2 Interface States

What is it about?

The energy distribution of electron states at SiC/SiO2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy. A similar distribution of interface traps over the SiC bandgap is observed for different polytypes indicating a common nature of interfacial defects. Carbon clusters at the SiC/SiO2 interface and near-interfacial defects in the SiO2 are proposed to be responsible for the dominant portion of interface traps, while contributions caused by dopant-related defects and dangling bonds at the SiC surface are not observed.

Why is it important?

Gives atomic insight on the interface defects in oxidized SiC which are fundamentally different from the dangling-bond dominated interface state spectrum of oxidized silicon.

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