All Stories

  1. Impact of Twin's Landscape on the Magnetic Damping of La2/3Sr1/3MnO3 Thin Films
  2. Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures
  3. Tunable Perpendicular Magnetoresistive Sensor Driven by Shape and Substrate Induced Magnetic Anisotropy
  4. From Electric Doping Control to Thermal Defect Nucleation in Perovskites
  5. Influence of growth temperature on the pinning landscape of YBa2Cu3O7− δ films grown from Ba-deficient solutions
  6. Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa 2 Cu 3 O 7−δ Films
  7. Interplay of Multiple Sediment Routing Systems Revealed by Combined Sandstone Petrography and Heavy Mineral Analysis (HMA) in the South Pyrenean Foreland Basin
  8. Spin to charge conversion in chemically deposited epitaxial La0.9MnO3 thin films capped with Pt
  9. Luminescent and Magnetic Tb-MOF Flakes Deposited on Silicon
  10. Low-Fluorine Ba-Deficient Solutions for High-Performance Superconducting YBCO Films
  11. Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon
  12. Heavy-mineral provenance signatures during the infill and uplift of a foreland basin: An example from the Jaca basin (southern Pyrenees, Spain)
  13. Rapid Thermal Annealing of Double Perovskite Thin Films Formed by Polymer Assisted Deposition
  14. Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films
  15. Spectroscopic study of partially oxidized BN nanoscrolls induced by low frequency ultrasonic irradiation
  16. Aqueous Chemical Solution Deposition of Functional Double Perovskite Epitaxial Thin Films
  17. Multi-Terminal Transistor-Like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications
  18. Spontaneous cationic ordering in chemical-solution-grown La2CoMnO6 double perovskite thin films
  19. Electromigration in the dissipative state of high-temperature superconducting bridges
  20. Dynamic magnetic properties and spin pumping in polymer-assisted-deposited La0.92MnO3 thin films
  21. Spontaneous in-flight assembly of magnetic nanoparticles into macroscopic chains
  22. 2D organic molecular metallic soft material derived from BEDO-TTF with electrochromic and rectifying properties
  23. Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films
  24. Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
  25. Petrographic and geochemical evidence for multiphase formation of carbonates in the Martian orthopyroxenite Allan Hills 84001
  26. E-MRS spring meeting 2016 symposium AA: solution processing and properties of functional oxide thin films and nanostructures II
  27. Chelyabinsk Meteorite as a Proxy for Studying the Properties of Potentially Hazardous Asteroids and Impact Deflection Strategies
  28. One-Step Route to Iron Oxide Hollow Nanocuboids by Cluster Condensation: Implementation in Water Remediation Technology
  29. Formation of Self-Organized Mn3O4 Nanoinclusions in LaMnO3 Films
  30. Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS 2 : vibrational properties of atomically thin MoS 2 layers
  31. Integration of functional complex oxide nanomaterials on silicon
  32. Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition
  33. The European Materials Research Society (EMRS) Spring Meeting 2014 Symposium I
  34. Chemical solution growth of La0.7Sr0.3MnO3 nanotubes in confined geometries
  35. Fabrication of highly regular suspended graphene nanoribbons through a one-step electron beam lithography process
  36. The Ardón L6 ordinary chondrite: A long‐hidden Spanish meteorite fall
  37. Ampacity and electrical properties of thermally treated ultrathin carbon membranes grown by focused ion beam induced deposition of phenanthrane
  38. Magnetic vortex evolution in self-assembled La0.7Sr0.3MnO3 nanoislands under in-plane magnetic field
  39. Thickness–concentration–viscosity relationships in spin-coated metalorganic ceria films containing polyvinylpyrrolidone
  40. Electronic and Magnetic Structure of LaSr-2×4 Manganese Oxide Molecular Sieve Nanowires
  41. Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation
  42. Formation of Graphene onto Atomically Flat 6H-SiC
  43. Focused ion beam as a tool for graphene technology: Structural study of processing sequence by electron microscopy
  44. Ferromagnetic 1D oxide nanostructures grown from chemical solutions in confined geometries
  45. Chemical solution route to self-assembled epitaxial oxide nanostructures
  46. Direct Monolithic Integration of Vertical Single Crystalline Octahedral Molecular Sieve Nanowires on Silicon
  47. Functional oxide nanostructures written by EBL on insulating single crystal substrates
  48. Thermal Analysis for Low Temperature Synthesis of Oxide Thin Films from Chemical Solutions
  49. Photoemission electron microscopy study of sub-200 nm self-assembled La0.7Sr0.3MnO3 epitaxial islands
  50. Dual Function Polyvinyl Alcohol Based Oxide Precursors for Nanoimprinting and Electron Beam Lithography
  51. Nucleation and mesostrain influence on percolating critical currents of solution derived YBa2Cu3O7 superconducting thin films
  52. Synthesis of patterned nanographene on insulators from focused ion beam induced deposition of carbon
  53. Interface structure governed by plastic and structural dissimilarity in perovskite La0.7Sr0.3MnO3 nanodots on rock-salt MgO substrates
  54. Nanoscale magnetic structure and properties of solution-derived self-assembled La0.7Sr0.3MnO3 islands
  55. Chemical synthesis of oriented ferromagnetic LaSr-2 × 4 manganese oxide molecular sieve nanowires
  56. Applicability and Results of Maastricht Type 2 Donation After Cardiac Death Liver Transplantation
  57. Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
  58. Characterisation of HfO<sub>2</sub>/Si/SiC MOS Capacitors
  59. Single Crystalline La0.7Sr0.3MnO3 Molecular Sieve Nanowires with High Temperature Ferromagnetism
  60. High temperature transformation of electrospun BaZrO3 nanotubes into nanoparticle chains
  61. 3C-SiC films on insulated substrates for high-temperature electrostatic-based resonators
  62. Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates
  63. Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices
  64. Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect
  65. Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
  66. Differences between Graphene Grown on Si-Face and C-Face
  67. SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
  68. Vertical (La,Sr)MnO3 Nanorods from Track‐Etched Polymers Directly Buffering Substrates
  69. Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities
  70. Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN
  71. Interfacial properties of AlN and oxidized AlN on Si
  72. Orientational ordering of solution derived epitaxial Gd-doped ceria nanowires induced by nanoscratching
  73. Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped6H-SiC
  74. Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
  75. Rich Phase Behavior in a Supramolecular Conducting Material Derived from an Organogelator
  76. Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
  77. Highly sensitive strained AlN on Si(111) resonators
  78. Ohmic Contacts to implanted GaN
  79. Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning
  80. Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification
  81. Early stage formation of graphene on the C face of 6H-SiC
  82. Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location
  83. Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing
  84. Single‐Crystalline La0.7Sr0.3MnO3 Nanowires by Polymer‐Template‐Directed Chemical Solution Synthesis
  85. Selective epitaxial growth of graphene on SiC
  86. Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection
  87. Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applications
  88. CVD oriented growth of carbon nanotubes using AlPO4-5 and L type zeolites
  89. SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
  90. Fabrication and Test of 3C-SiC Electrostatic Resonators
  91. SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
  92. SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
  93. Depth-Resolved Temperature Measurements on Power Devices under Transient Conditions
  94. Strong isotropic flux pinning in solution-derived YBa2Cu3O7−x nanocomposite superconductor films
  95. Fabrication and Test of 3C-SiC Electrostatic Resonators
  96. Local growth of carbon nanotubes by thermal chemical vapor deposition from iron based precursor nanoparticles
  97. Characterisation of YBa2Cu3O6+x films grown by the trifluoro-acetate metal organic decomposition route by infrared spectroscopy
  98. Precursor Evolution and Nucleation Mechanism of YBa2Cu3Ox Films by TFA Metal−Organic Decomposition
  99. Ta 2 Si short time thermal oxidized layers in N 2 O and O 2 to form high- k gate dielectric on SiC
  100. Smooth Stress Relief of Trifluoroacetate Metal-Organic Solutions for YBa2Cu3O7 Film Growth
  101. Impact of Annealing Temperature Ramps on the Electrical Activation of N<sup>+</sup> and P<sup>+</sup> Co-Implanted SiC Layers
  102. Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta<sub>2</sub>Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
  103. PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
  104. Electrosynthesis of the poly(N-vinyl carbazole)/carbon nanotubes composite for applications in the supercapacitors field
  105. Transmission Fabry–Pèrot interference thermometry for thermal characterization of microelectronic devices
  106. Interface control in all metalorganic deposited coated conductors: Influence on critical currents
  107. A study of the influence of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H–SiC devices
  108. Nucleation Mechanism OF YBa 2 Cu 3 O 7 by CSD using TFA Precursors
  109. All-chemical high-Jc YBa2Cu3O7 multilayers with SrTiO3 as cap layer
  110. Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC
  111. A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
  112. Progress towards all-chemical superconducting YBa 2 Cu 3 O 7 -coated conductors
  113. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
  114. Combined synchrotron x-ray diffraction and micro-Raman for following in situ the growth of solution-deposited YBa2Cu3O7 thin films
  115. Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes
  116. Thermal calibration procedure for internal infrared laser deflection apparatus
  117. The influence of growth conditions on the microstructure and critical currents of TFA-MOD YBa 2 Cu 3 O 7 films
  118. High<tex>$rm J_rm c$</tex>YBCO Thin Films and Multilayers Grown by Chemical Solution Deposition
  119. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N<sub>2</sub>O
  120. 4H-SiC MOSFETs Using Thermal Oxidized Ta<sub>2</sub>Si Films as High-k Gate Dielectric
  121. Epitaxial SiC Formation at the SiO<sub>2</sub>/Si Interface by C<sup>+</sup> Implantation into SiO<sub>2</sub> and Subsequent Annealing
  122. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
  123. Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
  124. Composite structure of wood cells in petrified wood
  125. Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments
  126. Full wafer size investigation of N+and P+co-implanted layers in 4H-SiC
  127. Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment
  128. Development of an analog processing circuit for IR-radiation power and noncontact position measurements
  129. Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator
  130. Experimental determination of lifetime engineering effects on free-carrier concentration
  131. Growth Mechanism and Opmization of MOD CeO2 Buffer Layers for TFA YBa2Cu3O7/CeO2 Multilayers
  132. Interface Control in All MOD Coated Conductors: Influence on Critical Currents
  133. Self-heating experimental study of 600V PT-IGBTs under low dissipation energies
  134. Biaxial texture analysis ofYBa2
  135. Chemical solution growth of superconductors: a new path towards high critical current coated conductors
  136. Chemical solution deposition: a path towards low cost coated conductors
  137. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
  138. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
  139. SiC Base Micro-Probe for Myocardial Ischemia Monitoring
  140. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
  141. Internal infrared laser deflection system: a tool for power device characterization
  142. Chemical solution techniques for epitaxial growth of oxide buffer and YBa2Cu3O7 films
  143. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
  144. 4H-SiC MIS structures using oxidized Ta2Si as high-k dielectric
  145. Sic Power Diodes Improvement by Fine Surface Polishing
  146. Ta[sub 2]Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC
  147. Theoretical and experimental investigations of single- and multilayer structures with SiGe nanoislands
  148. Aging of Sr2FeMoO6 and related oxides
  149. Influence of porosity on the critical currents of trifluoroacetate-MOD YBa/sub 2/Cu/sub 3/O/sub 7/ films
  150. Optimisation of junction termination extension for the development of a 2000 V planar 4H?SiC diode
  151. Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC
  152. High quality YBa 2 Cu 3 O 7 thin films grown by trifluoroacetates metalorganic deposition
  153. Epitaxial nucleation and growth of buffer layers and Y123 coated conductors deposited by metal-organic decomposition
  154. Infrared Investigation of Implantation Damage in 6H-SiC
  155. Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
  156. Optical investigation of CdSe/ZnSe quantum nanostructures
  157. Microscopic and optical investigation of Ge nanoislands on silicon substrates
  158. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
  159. Structural and Superconducting Properties of Hg0.75Re0.25Ba2−xSrxCa2Cu3O8+δ Superconductors Grown by Sol–Gel and Sealed Quartz Tube Synthesis
  160. Comment on “First-principles theory of the evolution of vibrational properties with long-range order inGaInP...
  161. An improved technology of 6H-SiC power diodes
  162. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
  163. Micro-Raman study of high pressure induced graphite-diamond phase-structural transformation: The role of a nitrogen containing precursor
  164. Effects of re-doping on superconducting properties and formation of Hg-1223 superconductors
  165. Synthesis and characterization of c-BN films prepared by ion beam assisted deposition and triode sputtering
  166. CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors
  167. Structure investigation of BN films grown by ion-beam-assisted deposition by means of polarised IR and Raman spectroscopy
  168. Lateral spread of implanted ion distributions in 6HSiC: simulation
  169. Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H–SiC
  170. Infrared and Raman analysis of plasma CVD boron nitride thin films
  171. Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC
  172. Compositional characterization of a-SiC:H films by infra-red spectroscopy
  173. Optical study of boron nitride thin films prepared by plasma-enhanced chemical vapor deposition
  174. Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2
  175. Raman scattering in single-variant spontaneously orderedGaInP2
  176. Phonon Raman scattering in quantum wires
  177. Electron localization in the disordered conductors TiNiSn and HfNiSn observed by Raman and infrared spectroscopies
  178. Magneto-optical properties of biaxially strained quantum wells
  179. Magneto-photoluminescence excitation spectroscopy in a centre Si delta -doped GaAs/Al0.33Ga0.67As double heterostructure
  180. Growth and characterization of Al1−yInyAs/Ga1−xInxAs strained multiple quantum wells
  181. Free to bound exciton relaxation in [001] and [111] GaAs/GaAlAs quantum wells
  182. Localization induced transformation of the lattice modes of MNiSn (M=Zr, Hf, Ti) compounds.
  183. Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ions
  184. Optical control of the two-dimensional electron-gas density in modulation-doped quantum wells studied by magnetophotoluminescence
  185. Valence-band-shape modification due to band coupling in strained quantum wells
  186. ANOMALOUS LATTICE PROPERTIES OF ZrNiSn CAUSED BY ELECTRON LOCALIZATION
  187. Excitonic spectrum of [111] GaAs/Gax
  188. Nonequilibrium luminescence at theE0+Δ0gap in GaAs with Si‐δ doping
  189. Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures
  190. Magneto-optics of narrow GaAs/Alx
  191. Magneto-optical properties of quantum wells under biaxial tensile strain
  192. Resonance Raman scattering of In Al1−As lattice matched to InP
  193. Growth and characterization of GaAs/Al/GaAs heterostructures
  194. Charge-density domains in photoexcited quantum-well structures
  195. Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
  196. Intrawell and interwell coupling of plasmons in multilayer modulation-doped GaAs/Al
  197. Resonant Raman scattering by plasmons and LO phonons near theE1
  198. PLASMONS AND SINGLE PARTICLE EXCITATIONS IN MODULATION DOPED QUANTUM WELLS
  199. Determination of single-particle relaxation time from light scattering spectra in modulation-doped quantum wells
  200. Spin relaxation of holes in the split-hole band of InP and GaSb
  201. Coupled Plasmons and Single Particle Excitations in the Two-Dimensional Electron Gas
  202. Raman Scattering by Coupled-Layer Plasmons and In-Plane Two-Dimensional Single-Particle Excitations in Multi-Quantum-Well Structures
  203. Resonant Raman Scattering by Spin-Density Fluctuations inn-Type Germanium
  204. Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs
  205. Resonant Raman Scattering by Spin-Density Fluctuations inn-type Germanium
  206. Light Scattering by Plasmons in Heavily Doped n-Type Ge and Si
  207. Light scattering by plasmons in germanium
  208. Hydrostatic-pressure dependence of bound excitons in GaP
  209. Resonant Raman scattering by plasmons in n-type Ge
  210. A study of the influence of N/sub 2/O and N/sub 2/ annealing processes on 4H-SiC MOS structures with deposited TEOS SiO/sub 2/ as gate oxide
  211. A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for mis structures on 4H-SiC
  212. Fabrication of electrostatic resonators with monocristaline 3C SiC grown on silicon