All Stories

  1. 30 kV Pulse Diode Stack Based on 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Adolf Schöner

  2. 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Francesco La Via, dr Roberta Nipoti, Dr Marcin Zielinski, Adolf Schöner, gregory grosset

  3. Local Lifetime Control in 4H-SiC by Proton Irradiation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Adolf Schöner, Pavel Hazdra

  4. Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Adolf Schöner

  5. Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Adolf Schöner

  6. High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Adolf Schöner

  7. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Adolf Schöner, Giovanni Alfieri

  8. 3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr marco mauceri, Francesco La Via, Adolf Schöner

  9. Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner

  10. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner, Giovanni Alfieri

  11. Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner

  12. Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner

  13. Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner

  14. Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

    Article • Materials Science Forum, October 2014, Trans Tech Publications

    Adolf Schöner