All Stories

  1. Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
  2. 1300°C Annealing of 1×1020 Al+ Ion Implanted 3C-SiC
  3. Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
  4. Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
  5. Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers
  6. Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
  7. Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers
  8. Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates
  9. 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
  10. Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
  11. Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
  12. Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
  13. p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
  14. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
  15. Novel 3C-SiC Microstructure for MEMS Applications
  16. Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers
  17. Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers
  18. Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
  19. Optical Characterization of p-Type 4H-SiC Epilayers
  20. Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect
  21. 3C-SiC: New Interest for MEMS Devices
  22. Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
  23. Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD