All Stories

  1. Displacement Damage and Total Ionization Dose Effects on 4H-SiC Power Devices

    Article • IET Power Electronics, September 2019, the Institution of Engineering and Technology (the IET)

    Pavel Hazdra

  2. Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Pavel Hazdra

  3. Local Lifetime Control in 4H-SiC by Proton Irradiation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Adolf Schöner, Pavel Hazdra

  4. Lifetime Control in SiC PiN Diodes Using Radiation Defects

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Pavel Hazdra

  5. Optimization of 1700V 4H-SiC JBS Diode Parameters

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Pavel Hazdra

  6. Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Pavel Hazdra

  7. Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Pavel Hazdra, Giovanni Alfieri

  8. Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Pavel Hazdra

  9. The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Pavel Hazdra

  10. The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Pavel Hazdra