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In this work microscale and nano-scale simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes have been done to estimate their feasibility for high mobility diodes.
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This page is a summary of: Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes, Materials Science Forum, June 2018, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.924.302.
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