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  1. Effects of the Inclusion of Armchair Graphene Nanoribbons on the Electrical Conduction Properties of NN-Heterojunction 4H-6H/SiC Diodes
  2. Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
  3. Nano and Micro-scale Simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction Diodes
  4. Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes
  5. SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack
  6. SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack