Low interface state density in Al2O3/n-GaN MOS capacitors with rapid deposition of Al2O3 gate insulator fabricated via mist-CVD

What is it about?

This study highlights the potential of mist chemical vapor deposition (mist-CVD) as an eco-friendly, cost-effective gate insulator deposition method for GaN-based metal-oxide-semiconductor (MOS) devices. We deposited an Al2O3 gate insulator on homoepitaxial n-GaN structures via mist-CVD. We found that mist-CVD achieved a deposition rate of 30 nm min−1. From an admittance analysis, quantitative characterizations confirmed low interface state density at the Al2O3/n-GaN interface near the conduction band edge, in the range of 1010 cm−2eV−1. These findings demonstrate that mist-CVD exhibits performance comparable to the conventional deposition method, atomic layer deposition, highlighting the potential of mist-CVD for GaN-based MOS device applications.

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