What is it about?
In this paper, a novel structure of cylindrical GAA-TFETs with high-k dielectric pocket is proposed to improve the analog and high frequency performances. We have discussed the device physics of proposed structure in details with the help of 3-D TCAD simulation
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This page is a summary of: Impact of Dielectric Pocket on Analog and High-Frequency Performances of Cylindrical Gate-All-Around Tunnel FETs, ECS Journal of Solid State Science and Technology, January 2018, The Electrochemical Society,
DOI: 10.1149/2.0101805jss.
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