Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

  • Salvador P. Gimenez, Rodrigo M. Ferreira, João A. Martino
  • January 2007, The Electrochemical Society
  • DOI: 10.1149/1.2813504

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http://dx.doi.org/10.1149/1.2813504

The following have contributed to this page: Dr Salvador Pinillos Gimenez

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