Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

Thomas P. Ernst, Francois Andrieu, O Weber, Jean-Michel Hartmann, C Dupre, O Faynot, J-C Barbe, Joel Eymery, S Barraud, Frédérique Ducroquet, G Ghibaudo, Simon Deleonibus
  • January 2006, The Electrochemical Society
  • DOI: 10.1149/1.2355889

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1149/1.2355889

The following have contributed to this page: Dr Joel Eymery