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This page is a summary of: A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes, IEEE Transactions on Electron Devices, December 2009, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/ted.2009.2032743.
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