All Stories

  1. Time-Based 8TD SRAM CIM Macro With Low PVT Sensitivity for Edge Devices

    Article • IEEE Journal on Emerging and Selected Topics in Circuits and Systems, June 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  2. Characterization of 4H-SiC Lateral MOSFETs up to 773 K

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  3. Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K

    Article • Key Engineering Materials, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  4. Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate

    Article • Materials Science Forum, May 2026, Trans Tech Publications

    Dr. Mathias Rommel, Gian Domenico Licciardo

  5. A 4H-SiC CTAT Temperature Sensor Operating Between 14 and 481 K

    Article • IEEE Sensors Letters, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  6. Overflow-Driven Dynamic Precision Scaling Fixed-Point Multiply-Accumulator Unit

    Article • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  7. Analysis of the Body Effect in a 4H-SiC NMOSFET Temperature Sensor Between100 and 673 K

    Article • IEEE Transactions on Electron Devices, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  8. Real-time neural network-based thermal stress compensation for pressure sensors in precision localization systems

    Article • Microprocessors and Microsystems, September 2025, Elsevier

    Gian Domenico Licciardo

  9. Calibration-Free Edge-Computing IMC Macro With Direct Current-to-Digital Conversion

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, August 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  10. Design Space Exploration of an In-Sensor Processor for Object Classification in Ultracompact Time-of-Flight Sensors

    Article • IEEE Sensors Journal, July 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  11. Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K

    Article • IEEE Sensors Letters, March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  12. Anomalous I-V Characteristics of 4H-SiC p-i-n Diode at Cryogenic Temperature

    Article • January 2025, Springer Science + Business Media

    Gian Domenico Licciardo

  13. Second-Order Effects on 4H-SiC Lateral MOSFETs Characteristics up to 773 K

    Article • IEEE Transactions on Electron Devices, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  14. Uniformity and Repeatability of the Electrical Performance of 4H-SiC Lateral CMOS Devices and Circuits After Postprocessing Annealing

    Article • IEEE Transactions on Electron Devices, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  15. A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K

    Article • IEEE Electron Device Letters, November 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  16. Multiclass Object Classification Using Ultra-Low Resolution Time-of-Flight Sensors

    Article • IEEE Sensors Letters, October 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  17. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations

    Article • IEEE Electron Device Letters, August 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  18. A New Hardware Architecture for SVPWM Technique Based on the Taylor Decomposition

    Article • IEEE Journal of Emerging and Selected Topics in Power Electronics, April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  19. Automatic Audio Feature Extraction for Keyword Spotting

    Article • IEEE Signal Processing Letters, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  20. A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K

    Article • Sensors, December 2023, MDPI AG

    Dr. Mathias Rommel, Gian Domenico Licciardo

  21. Design and Analysis of a Voltage Schmitt Trigger in 4H-SiC CMOS Technology

    Article • November 2023, Springer Science + Business Media

    Gian Domenico Licciardo

  22. In-Sensor System for Real-Time Compensation of Thermal Drift in MEMS Pressure Sensors

    Article • November 2023, Springer Science + Business Media

    Gian Domenico Licciardo

  23. Tiny Machine Learning Zoo for Long-Term Compensation of Pressure Sensor Drifts

    Article • Electronics, November 2023, MDPI AG

    Gian Domenico Licciardo

  24. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions

    Article • June 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Mathias Rommel, Gian Domenico Licciardo

  25. Low-complexity Machine Learning Architecture for Hardware-aware True Random Number Generators Assessment and Continuous Monitoring

    Article • June 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  26. Low-power CNN for real-time driver posture monitoring by image processing

    Article • June 2023, SPIE

    Alessandro Naddeo, Gian Domenico Licciardo

  27. In-sensor neural network for real-time KWS by image processing

    Article • June 2023, SPIE

    Gian Domenico Licciardo

  28. Tiny compensation of pressure drift measurements due to long exposures to high temperatures

    Article • May 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  29. Ultra-Tiny Neural Network for Compensation of Post-soldering Thermal Drift in MEMS Pressure Sensors

    Article • May 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  30. A New NN-Based Approach to In-Sensor PDM-to-PCM Conversion for Ultra TinyML KWS

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, April 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  31. A 0.8 mW TinyML-Based PDM-to-PCM Conversion for In-Sensor KWS Applications

    Article • January 2023, Springer Science + Business Media

    Gian Domenico Licciardo

  32. A FPGA HardWare Architecture for AZSPWM Based on a Taylor Series Decomposition

    Article • January 2023, Springer Science + Business Media

    Gian Domenico Licciardo

  33. FPGA HardWare Architecture for SVPWM Based on a Taylor Series Decomposition

    Article • January 2023, Springer Science + Business Media

    Gian Domenico Licciardo

  34. A Novel FPGA HW Implementation for SVPWM Technique Using Taylor Series

    Article • November 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  35. Polymer Insulator Processing‐Organic Transistor Performance Relationship Investigated through Admittance Spectroscopy

    Article • Macromolecular Symposia, October 2022, Wiley

    Gian Domenico Licciardo

  36. A Hardware Architecture for SVPWM Digital Control With Variable Carrier Frequency and Amplitude

    Article • IEEE Transactions on Industrial Informatics, August 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  37. Modeling of an Organic Thin Film Transistor as Temperature Sensor

    Article • June 2022, Springer Science + Business Media

    Gian Domenico Licciardo

  38. Quantized ID-CNN for a Low-power PDM-to-PCM Conversion in TinyML KWS Applications

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  39. Low-Power Detection and Classification for In-Sensor Predictive Maintenance Based on Vibration Monitoring

    Article • IEEE Sensors Journal, April 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  40. Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model

    Article • Electronics, January 2022, MDPI AG

    Gian Domenico Licciardo

  41. Implementation of Hardware Architecture for SVPWM With Arbitrary Parameters

    Article • IEEE Access, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  42. Low-Power Anomaly Detection and Classification System based on a Partially Binarized Autoencoder for In-Sensor Computing

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  43. Highly-accurate binary tiny neural network for low-power human activity recognition

    Article • Microprocessors and Microsystems, November 2021, Elsevier

    Gian Domenico Licciardo

  44. Linear organic transistor based temperature sensor between 230 and 330 K

    Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  45. A Model of the V-T Characteristics for an OTFT Temperature Sensor

    Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  46. Quantized Fully Convolution Neural Network for HW Implementation of Human Posture Recognition

    Article • June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Alessandro Naddeo, Gian Domenico Licciardo

  47. A Resource Constrained Neural Network for the Design of Embedded Human Posture Recognition Systems

    Article • Applied Sciences, May 2021, MDPI AG

    Alessandro Naddeo, Gian Domenico Licciardo

  48. Design of Digital Controller for SVPWM Algorithm with Real-Time Control of the Output Amplitude and Switching Frequency

    Article • May 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  49. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier

    Article • Mathematics and Computers in Simulation, May 2021, Elsevier

    Gian Domenico Licciardo

  50. Comparing Industry Frameworks with Deeply Quantized Neural Networks on Microcontrollers

    Article • January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  51. A Partially Binarized Hybrid Neural Network System for Low-Power and Resource Constrained Human Activity Recognition

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, November 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  52. Low Power Tiny Binary Neural Network with improved accuracy in Human Recognition Systems

    Article • August 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  53. Low-Power HWAccelerator for AI Edge-Computing in Human Activity Recognition Systems

    Article • August 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  54. Embeddable Circuit for Orientation Independent Processing in Ultra Low-Power Tri-Axial Inertial Sensors

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  55. A Fully FPGA Implementation of SVPWM for Three-phase Inverters without External Reference Signals

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  56. A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  57. Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors

    Article • January 2020, Springer Science + Business Media

    Gian Domenico Licciardo

  58. Low-Power Integrated Circuit for Orientation Independent Acquisitions from Smart Accelerometers

    Article • January 2020, Springer Science + Business Media

    Gian Domenico Licciardo

  59. A Bit-Line Voltage Sensing Circuit With Fused Offset Compensation and Cancellation Scheme

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, October 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  60. A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa Structure

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  61. Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Christian CDM Matthus, Gian Domenico Licciardo, Dr. Luigi Di Benedetto

  62. First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  63. µW Pre-processing Unit for Virtual Sensors Based on Tri-axial Smart Accelerometers

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  64. Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K

    Article • IEEE Sensors Journal, April 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  65. Design of a Gabor Filter HW Accelerator for Applications in Medical Imaging

    Article • IEEE Transactions on Components Packaging and Manufacturing Technology, July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  66. Low-power Design of a Gravity Rotation Module for HAR Systems Based on Inertial Sensors

    Article • July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  67. Design Criteria for Real-time Processing of HW Gabor Filters in Visual Search

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  68. V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model

    Article • IEEE Transactions on Electron Devices, February 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  69. Multiplier-Less Stream Processor for 2D Filtering in Visual Search Applications

    Article • IEEE Transactions on Circuits and Systems for Video Technology, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  70. A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

    Article • Sensors and Actuators A Physical, January 2018, Elsevier

    Gian Domenico Licciardo

  71. An FPGA oprimization of a multiple resolution architecture for LDR to HDR image conversion

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  72. Hardware accelerator using Gabor filters for image recognition applications

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  73. Hardware architecture for 2D Gaussian filtering of HD images on resource constrained platforms

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  74. Analysis of the performances of a fully 4H-SiC insultated DC/AC converters

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  75. Dynamic range enhancement for medical image processing

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  76. Evaluation of NB-PLC in railway environments

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  77. Experimental results on lateral 4H-SiC UV photodiodes

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  78. Losses of 4H-SiC DMOFET in high voltage power converters

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  79. Optimal design of a Gabor filter for medical imaging applications

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  80. Design of a Convolutional Two-Dimensional Filter in FPGA for Image Processing Applications

    Article • Computers, May 2017, MDPI AG

    Gian Domenico Licciardo

  81. Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  82. Insights Into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor

    Article • IEEE Transactions on Electron Devices, May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  83. Weighted Partitioning for Fast Multiplierless Multiple-Constant Convolution Circuit

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  84. Application specific image processor for the extension of the dynamic range of images with multiple resolutions

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  85. Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET

    Article • November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  86. Modelling the I-V-T characteristics of 4H-SiC DMOSFET in presence of SiO2/SiC interface traps and fixed oxide

    Article • November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  87. SiO2/4H-SiC interface traps effects on the input capacitance of DMOSFET

    Article • November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  88. Optimized Design for 4H-SiC Power DMOSFET

    Article • IEEE Electron Device Letters, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  89. Design and FPGA implementation of a real-time processor for the HDR conversion of images and videos

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  90. FPGA optimization of convolution-based 2D filtering processor for image processing

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  91. A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

    Article • IEEE Transactions on Electron Devices, September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  92. Design of an offset-tolerant voltage sense amplifier bit-line sensing circuit for SRAM memories

    Article • Electronics Letters, August 2016, the Institution of Engineering and Technology (the IET)

    Dr. Luigi Di Benedetto, Dr Carmine Cappetta, Gian Domenico Licciardo

  93. Frame buffer-less stream processor for accurate real-time interest point detection

    Article • Integration, June 2016, Elsevier

    Gian Domenico Licciardo

  94. Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes

    Article • IEEE Transactions on Electron Devices, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  95. On the analogy of the potential barrier of trenched JFET and JBS devices

    Article • Solid-State Electronics, June 2016, Elsevier

    Gian Domenico Licciardo

  96. Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  97. Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET

    Article • IEEE Transactions on Electron Devices, April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  98. Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors

    Article • Procedia Engineering, January 2016, Elsevier

    Gian Domenico Licciardo

  99. Stream Processor for Real-Time Inverse Tone Mapping of Full-HD Images

    Article • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  100. Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

    Article • IEEE Transactions on Power Electronics, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  101. Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications

    Article • IEEE Journal of the Electron Devices Society, September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Giovanni Landi, Gian Domenico Licciardo

  102. A model of the off-behaviour of 4H–SiC power JFETs

    Article • Solid-State Electronics, July 2015, Elsevier

    Gian Domenico Licciardo

  103. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  104. A Circuital Model of Switching Behaviour of 4H-SiC p+-n-n+ Diodes Valid at any Current and Temperature

    Article • Journal of Physics Conference Series, April 2014, Institute of Physics Publishing

    Gian Domenico Licciardo

  105. On the Crossing-Point of 4H-SiC Power Diodes Characteristics

    Article • IEEE Electron Device Letters, February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  106. A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

    Article • IEEE Transactions on Electron Devices, September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  107. An Analytical Model of the Switching Behavior of 4H-SiC p$^{\bm +}$ -n-n$^{\bm +}$ Diodes from Arbitrary Injection Conditions

    Article • IEEE Transactions on Power Electronics, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  108. Design of a context-adaptive variable length encoder for real-time video compression on reconfigurable platforms

    Article • IET Image Processing, January 2012, the Institution of Engineering and Technology (the IET)

    Gian Domenico Licciardo

  109. Extension of the TPA method for the exact analysis of feedback circuits in terms of the return ratio

    Article • May 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  110. A self-consistent model of the static and switching behaviour of 4H-SiC diodes

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  111. An area reduced design of the Context-Adaptive Variable-Length encoder suitable for embedded systems

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  112. A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes

    Article • IEEE Transactions on Electron Devices, December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  113. Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes

    Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  114. An Analog Circuit for Accurate OCVD Measurements

    Article • IEEE Transactions on Instrumentation and Measurement, June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  115. Physical model, measurement setup and experiments of a measurement technique of the carrier lifetime profile in power devices

    Article • December 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  116. The effect of ITO surface energy on OLED electrical properties

    Article • December 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  117. An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime

    Article • IEEE Transactions on Electron Devices, November 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  118. An H.264 Encoder for Real Time Video Processing Designed for SPEAr Customizable System-on-Chip Family

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  119. Erratum to “Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell” [Solar Energy Materials & Solar Cells 83 (2004) 435–446]

    Article • Solar Energy Materials and Solar Cells, March 2006, Elsevier

    Gian Domenico Licciardo

  120. Test structure design for measuring electron and hole mobilities at very high injection levels

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  121. Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method

    Article • IEEE Electron Device Letters, July 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo

  122. Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell

    Article • Solar Energy Materials and Solar Cells, July 2004, Elsevier

    Gian Domenico Licciardo

  123. Modelling and characterisation of the OCVD response at an arbitrary time and injection level

    Article • Solid-State Electronics, July 2004, Elsevier

    Gian Domenico Licciardo

  124. A novel measurement method of the spatial carrier lifetime profile based on the OCVD technique

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Gian Domenico Licciardo