All Stories

  1. A 4H-SiC CTAT Temperature Sensor Operating Between 14 and 481 K
  2. Overflow-Driven Dynamic Precision Scaling Fixed-Point Multiply-Accumulator Unit
  3. Real-time neural network-based thermal stress compensation for pressure sensors in precision localization systems
  4. Calibration-Free Edge-Computing IMC Macro With Direct Current-to-Digital Conversion
  5. Design Space Exploration of an In-Sensor Processor for Object Classification in Ultracompact Time-of-Flight Sensors
  6. Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K
  7. Anomalous I-V Characteristics of 4H-SiC p-i-n Diode at Cryogenic Temperature
  8. Second-Order Effects on 4H-SiC Lateral MOSFETs Characteristics up to 773 K
  9. Uniformity and Repeatability of the Electrical Performance of 4H-SiC Lateral CMOS Devices and Circuits After Postprocessing Annealing
  10. A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K
  11. Multiclass Object Classification Using Ultra-Low Resolution Time-of-Flight Sensors
  12. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations
  13. A New Hardware Architecture for SVPWM Technique Based on the Taylor Decomposition
  14. Automatic Audio Feature Extraction for Keyword Spotting
  15. A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K
  16. Design and Analysis of a Voltage Schmitt Trigger in 4H-SiC CMOS Technology
  17. In-Sensor System for Real-Time Compensation of Thermal Drift in MEMS Pressure Sensors
  18. Tiny Machine Learning Zoo for Long-Term Compensation of Pressure Sensor Drifts
  19. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions
  20. Low-complexity Machine Learning Architecture for Hardware-aware True Random Number Generators Assessment and Continuous Monitoring
  21. Low-power CNN for real-time driver posture monitoring by image processing
  22. In-sensor neural network for real-time KWS by image processing
  23. Tiny compensation of pressure drift measurements due to long exposures to high temperatures
  24. Ultra-Tiny Neural Network for Compensation of Post-soldering Thermal Drift in MEMS Pressure Sensors
  25. A New NN-Based Approach to In-Sensor PDM-to-PCM Conversion for Ultra TinyML KWS
  26. A 0.8 mW TinyML-Based PDM-to-PCM Conversion for In-Sensor KWS Applications
  27. A FPGA HardWare Architecture for AZSPWM Based on a Taylor Series Decomposition
  28. FPGA HardWare Architecture for SVPWM Based on a Taylor Series Decomposition
  29. A Novel FPGA HW Implementation for SVPWM Technique Using Taylor Series
  30. Polymer Insulator Processing‐Organic Transistor Performance Relationship Investigated through Admittance Spectroscopy
  31. A Hardware Architecture for SVPWM Digital Control With Variable Carrier Frequency and Amplitude
  32. Modeling of an Organic Thin Film Transistor as Temperature Sensor
  33. Quantized ID-CNN for a Low-power PDM-to-PCM Conversion in TinyML KWS Applications
  34. Low-Power Detection and Classification for In-Sensor Predictive Maintenance Based on Vibration Monitoring
  35. Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model
  36. Implementation of Hardware Architecture for SVPWM With Arbitrary Parameters
  37. Low-Power Anomaly Detection and Classification System based on a Partially Binarized Autoencoder for In-Sensor Computing
  38. Highly-accurate binary tiny neural network for low-power human activity recognition
  39. Linear organic transistor based temperature sensor between 230 and 330 K
  40. A Model of the V-T Characteristics for an OTFT Temperature Sensor
  41. Quantized Fully Convolution Neural Network for HW Implementation of Human Posture Recognition
  42. A Resource Constrained Neural Network for the Design of Embedded Human Posture Recognition Systems
  43. Design of Digital Controller for SVPWM Algorithm with Real-Time Control of the Output Amplitude and Switching Frequency
  44. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier
  45. Comparing Industry Frameworks with Deeply Quantized Neural Networks on Microcontrollers
  46. A Partially Binarized Hybrid Neural Network System for Low-Power and Resource Constrained Human Activity Recognition
  47. Low Power Tiny Binary Neural Network with improved accuracy in Human Recognition Systems
  48. Low-Power HWAccelerator for AI Edge-Computing in Human Activity Recognition Systems
  49. Embeddable Circuit for Orientation Independent Processing in Ultra Low-Power Tri-Axial Inertial Sensors
  50. A Fully FPGA Implementation of SVPWM for Three-phase Inverters without External Reference Signals
  51. A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier
  52. Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors
  53. Low-Power Integrated Circuit for Orientation Independent Acquisitions from Smart Accelerometers
  54. A Bit-Line Voltage Sensing Circuit With Fused Offset Compensation and Cancellation Scheme
  55. A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa Structure
  56. Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
  57. First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
  58. µW Pre-processing Unit for Virtual Sensors Based on Tri-axial Smart Accelerometers
  59. Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K
  60. Design of a Gabor Filter HW Accelerator for Applications in Medical Imaging
  61. Low-power Design of a Gravity Rotation Module for HAR Systems Based on Inertial Sensors
  62. Design Criteria for Real-time Processing of HW Gabor Filters in Visual Search
  63. V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model
  64. Multiplier-Less Stream Processor for 2D Filtering in Visual Search Applications
  65. A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents
  66. An FPGA oprimization of a multiple resolution architecture for LDR to HDR image conversion
  67. Hardware accelerator using Gabor filters for image recognition applications
  68. Hardware architecture for 2D Gaussian filtering of HD images on resource constrained platforms
  69. Analysis of the performances of a fully 4H-SiC insultated DC/AC converters
  70. Dynamic range enhancement for medical image processing
  71. Evaluation of NB-PLC in railway environments
  72. Experimental results on lateral 4H-SiC UV photodiodes
  73. Losses of 4H-SiC DMOFET in high voltage power converters
  74. Optimal design of a Gabor filter for medical imaging applications
  75. Design of a Convolutional Two-Dimensional Filter in FPGA for Image Processing Applications
  76. Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
  77. Insights Into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor
  78. Weighted Partitioning for Fast Multiplierless Multiple-Constant Convolution Circuit
  79. Application specific image processor for the extension of the dynamic range of images with multiple resolutions
  80. Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET
  81. Modelling the I-V-T characteristics of 4H-SiC DMOSFET in presence of SiO2/SiC interface traps and fixed oxide
  82. SiO2/4H-SiC interface traps effects on the input capacitance of DMOSFET
  83. Optimized Design for 4H-SiC Power DMOSFET
  84. Design and FPGA implementation of a real-time processor for the HDR conversion of images and videos
  85. FPGA optimization of convolution-based 2D filtering processor for image processing
  86. A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs
  87. Design of an offset-tolerant voltage sense amplifier bit-line sensing circuit for SRAM memories
  88. Frame buffer-less stream processor for accurate real-time interest point detection
  89. Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
  90. On the analogy of the potential barrier of trenched JFET and JBS devices
  91. Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
  92. Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET
  93. Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors
  94. Stream Processor for Real-Time Inverse Tone Mapping of Full-HD Images
  95. Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range
  96. Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications
  97. A model of the off-behaviour of 4H–SiC power JFETs
  98. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes
  99. A Circuital Model of Switching Behaviour of 4H-SiC p+-n-n+ Diodes Valid at any Current and Temperature
  100. On the Crossing-Point of 4H-SiC Power Diodes Characteristics
  101. A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
  102. An Analytical Model of the Switching Behavior of 4H-SiC p$^{\bm +}$ -n-n$^{\bm +}$ Diodes from Arbitrary Injection Conditions
  103. Design of a context-adaptive variable length encoder for real-time video compression on reconfigurable platforms
  104. Extension of the TPA method for the exact analysis of feedback circuits in terms of the return ratio
  105. A self-consistent model of the static and switching behaviour of 4H-SiC diodes
  106. An area reduced design of the Context-Adaptive Variable-Length encoder suitable for embedded systems
  107. A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes
  108. Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes
  109. An Analog Circuit for Accurate OCVD Measurements
  110. Physical model, measurement setup and experiments of a measurement technique of the carrier lifetime profile in power devices
  111. The effect of ITO surface energy on OLED electrical properties
  112. An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime
  113. An H.264 Encoder for Real Time Video Processing Designed for SPEAr Customizable System-on-Chip Family
  114. Erratum to “Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell” [Solar Energy Materials & Solar Cells 83 (2004) 435–446]
  115. Test structure design for measuring electron and hole mobilities at very high injection levels
  116. Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method
  117. Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell
  118. Modelling and characterisation of the OCVD response at an arbitrary time and injection level
  119. A novel measurement method of the spatial carrier lifetime profile based on the OCVD technique