Impact of Using the Octagonal Layout for SOI MOSFETs in a High-Temperature Environment

  • Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, Christian Renaux, Denis Flandre
  • IEEE Transactions on Device and Materials Reliability, December 2015, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/tdmr.2015.2474739

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http://dx.doi.org/10.1109/tdmr.2015.2474739

The following have contributed to this page: Dr Salvador Pinillos Gimenez

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