Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon–Germanium Source/Drain

Sophie Baudot, Francois Andrieu, Olivier Weber, Pierre Perreau, Jean-François Damlencourt, Sebastien Barnola, Thierry Salvetat, Lucie Tosti, Laurent Brevard, Dominique Lafond, Joel Eymery, Olivier Faynot
  • IEEE Electron Device Letters, October 2010, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/led.2010.2057500

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The following have contributed to this page: Dr Joel Eymery