Width and orientation effects in strained FDSOI MOSFETs: strain and device characterization

S. Baudot, J. Eymery, F. Andrieu, V. Vidal, F. Allain, L. Brevard, O. Faynot
  • September 2009, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/essderc.2009.5331541

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The following have contributed to this page: Dr Joel Eymery