Width and orientation effects in strained FDSOI MOSFETs: strain and device characterization

S. Baudot, J. Eymery, F. Andrieu, V. Vidal, F. Allain, L. Brevard, O. Faynot
  • September 2009, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/essderc.2009.5331541

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1109/essderc.2009.5331541

The following have contributed to this page: Dr Joel Eymery