What is it about?
As a review article, this overlooks related silicon technologies from FINFETs to Nanosheet FETS. Specifically, nanosheet channel is on a junction between quantum physics and the drift-diffusion model (near classical modeling). For our own achievement in this work, by carefully investigating quantum mechanical thickness effect, we successfully retrieved the relationship between thickness and threshold voltage, so that we can measure nanosheet thickness nondestructively.
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Why is it important?
Nanosheet FET's era has begun. Nanosheet thickness (channel thickness) is critical to electrical properties of FETs. Hence, the intrusion of quantum mechanical size effects into the device modeling was discussed carefully. The first achievement was the relationship between nanosheet thickness and threshold voltage. This relationship contributed to the first experimental evidence for the size-induced mobility enhancement and the surface roughness scattering.
Perspectives
Though this survey carefully considered various detailed modelings of quantum many-body effects, the calculation of surface charge was based on the effective mass approximation. However, the idea of the effective mass was from three-dimensional bulk materials. There is no guarantee where the effective mass is available to nanosheet channel. The careful theoretical consideration in this article suggests that the definition of the effective mass is the next crucial problem.
Hiroshi Watanabe
National Yang Ming Chiao Tung University
Read the Original
This page is a summary of: Quantum Confinement and Two-Dimensional Electron Gases in Silicon Nanosheet Channels, IEEE Electron Devices Reviews, January 2025, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/edr.2025.3644999.
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