Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction

J. Eymery, D. Buttard, F. Fournel, H. Moriceau, G. T. Baumbach, D. Lübbert
  • April 2002, American Physical Society (APS)
  • DOI: 10.1103/physrevb.65.165337

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The following have contributed to this page: Dr Joel Eymery