Fabrication of ultrahigh density metal–cell–metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

B Y Zong, J Y Goh, Z B Guo, P Luo, C C Wang, J J Qiu, P Ho, Y J Chen, M S Zhang, G C Han
  • Nanotechnology, May 2013, Institute of Physics Publishing
  • DOI: 10.1088/0957-4484/24/24/245303

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http://dx.doi.org/10.1088/0957-4484/24/24/245303

The following have contributed to this page: Dr BaoYu Zong