What is it about?
The study of correlated phenomena in 2D semiconductors opens up new pathways toward understanding and engineering material functionalities (such as thermoelectrics) in easily accessible van der Waals solids. Herein we discover unusual thermoelectric behavior in sulfur vacancy-enriched MoS2 by rationally selecting h-BN as the substrate. We demonstrate that the thermoelectric transport properties can be strongly manipulated by vacancy-induced Kondo hybridization. A significant enhancement of thermoelectric power factor by two orders of magnitude is achieved in the MoS2/h-BN device.
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Why is it important?
Correlated behaviour such as Kondo resonance, as we've demonstrated in this work, allows for new physics that enhance thermoelectric powerfactor beyond conventional semiconductor properties.
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This page is a summary of: Large enhancement of thermoelectric performance in MoS
2
/
h
-BN heterostructure due to vacancy-induced band hybridization, Proceedings of the National Academy of Sciences, June 2020, Proceedings of the National Academy of Sciences,
DOI: 10.1073/pnas.2007495117.
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