What is it about?
This paper discusses the use of XeF2 and Ga thermal decomposition cycles to remove impurities that arise on GaN regrowth interfaces through air exposure. The combined techniques show a reduction of ~90% of the charge at intentionally air exposed interfaces.
Featured Image
Why is it important?
This set of techniques facilitates vertical GaN power electronic devices by allowing local area doping that is not readily achievable through other means than etch and regrowth.
Perspectives
This publication shows a method of removing the ambient Si from regrowth interfaces, which has been a problem plaguing GaN research for over 15 years. These regrowth impurities have constantly hampered vertical GaN structures. As a result, the field can move forward with more complicated device geometries and move away from the standard lateral architectures.
Zachary Biegler
University of California Santa Barbara
Read the Original
This page is a summary of: Removal of Si impurities from GaN regrowth interfaces using XeF2, Applied Physics Letters, August 2025, American Institute of Physics,
DOI: 10.1063/5.0282182.
You can read the full text:
Contributors
The following have contributed to this page
