What is it about?
Optical spectroscopy experiments on site-controlled quantum disks which allow characterisation of their optical properties. The data has also been recorded at low temperature ranges, varying multiple physical parameters with analysis included for each experiment.
Featured Image
Why is it important?
Hydrogenated InGaAsN nanostructure can be utilised in quantum applications at the coveted low-loss telecommunication window. This is especially attractive considering the ease of fabrication and the high deterministic site-controlled growth possible. Data from transient and steady-state optical spectroscopy experiments with varying temperature and laser pulse energy to determine carrier dynamics in these structures are not available in the literature. All nine figures included and the data analysis are completely original work. Investigation of recombination dynamics enhances our understanding of semiconductor physics in hydrogenated nanostructures and will contribute to higher efficiency devices.
Perspectives
Recombination processes in semiconductors provide deep insight into the physics governing their optical behaviour. This work aims to bridge the gap between material and optical properties of novel hydrogenated InGaAsN quantum disks using optical spectroscopy experiments to identify specific recombination processes.
Shumithira Gandan
Read the Original
This page is a summary of: Carrier dynamics in site-controlled InGaAsN:H/GaAs quantum disks, Journal of Applied Physics, June 2025, American Institute of Physics,
DOI: 10.1063/5.0273700.
You can read the full text:
Contributors
The following have contributed to this page
