What is it about?
Fully depleted silicon-on-insulator transistors with an 11 nm thick channel are used to form quantum bits (qubits). Defects in the crystal lattice located in the channel of the transistor can modify the behavior of the qubit and reduce its performance, in particular the length of time during which the quantum information is retained. Too short a duration can lead to errors in the calculations made by the quantum computer integrating these quantum bits. This work focuses on the detection of crystal lattice defects in the transistor channel. 3 defects were detected in the doped areas forming the source and drain regions of the transistors. As a result, this work demonstrates that an improvement in the stability of qubits fabricated using fully depleted silicon-on-insulator transistor technology can be achieved by moving the doped regions away from the quantum information storage area beneath the gate contact.
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Why is it important?
Defects are detected using capacitance deep level transient spectroscopy. This technique is highly sensitive and can be used to locate defects in the transistor structure. It also provides the concentration and signature of defects.
Perspectives
Other qubit architectures will be measured in the future.
Philippe FERRANDIS
Universite Grenoble Alpes
Read the Original
This page is a summary of: Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications, Applied Physics Letters, March 2025, American Institute of Physics,
DOI: 10.1063/5.0255225.
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