What is it about?

Ultra-wide bandgap semiconductors are key to future high-power, high-temperature electronic devices. Among them, cubic boron nitride (c-BN) grown on diamond is especially promising due to their structural compatibility and excellent thermal properties. This study investigates how thin films of c-BN form on diamond under different growth conditions. Using electron microscopy and spectroscopy, we examine phase purity, bonding changes, and defect formation. The findings show progress toward achieving high-quality, epitaxial c-BN films using PECVD, with fewer unwanted phases and lower defect densities.

Featured Image

Why is it important?

This work provides one of the first detailed structural and chemical analyses of c-BN/diamond heterostructures grown using PECVD—a low-energy, scalable technique. By linking specific growth conditions to phase purity and defect formation, the study offers practical guidance for improving film quality in ultra-wide bandgap materials. These insights are timely, as c-BN is increasingly recognized as a next-generation semiconductor, and understanding its growth behavior is essential for advancing high-performance power electronics.

Perspectives

This work represents a milestone in my journey as a materials scientist. Diving deep into the structural and chemical intricacies of c-BN/diamond heterostructures challenged me to think critically at the atomic scale. Through this study, I not only advanced my understanding of thin film growth and defect analysis, but also leveled up as a researcher—both technically and intellectually. I'm especially grateful for the collaboration and mentorship that supported this work, and I hope it contributes meaningfully to the growing field of ultra-wide bandgap semiconductors.

Saurabh Vishwakarma
Arizona State University

Read the Original

This page is a summary of: Structural and chemical analysis of c-BN/diamond heterostructures, Journal of Applied Physics, April 2025, American Institute of Physics,
DOI: 10.1063/5.0251000.
You can read the full text:

Read

Contributors

The following have contributed to this page