Spin Hall magnetoresistance in 2D PtSe2/ferromagnet heterostructures

What is it about?

In this letter, we investigate SMR exploring 2D TMDs/FM heterostructures, i.e., PtSe2/Py, whose magnitude reaches the maximum with bilayer PtSe2. Moreover, the SMR value in bilayer PtSe2/Py heterostructures undergoes two sign changes with increasing Py thickness, attributed to the dominant and competing mechanisms that contribute to SMR, including the spin Hall effect (or Rashba-induced effect) and their inverse effects, the orbital Hall effect (OHE) and its inverse effect, as well as interfacial spin-orbit-coupling-induced spin-currentto-charge-current conversion. These findings would expand the arsenal for advanced spintronic applications based on 2D TMDs.

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Why is it important?

The recent discovery of inherently stable two-dimensional (2D) transition-metal dichalcogenides (TMDs) provides a unique platform for spintronics devices. However, its efficacy for electric detection by spin Hall magnetoresistance (SMR) has not been established yet. It is crucial to distinguish the origin of SMR in 2D TMDs/FM heterostructures and demonstrate its influence on SMR.

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