GaN optoelectronic system on a monolithic chip

What is it about?

GaN-based devices have grown rapidly in recent decades, due to their important research value and application prospects. There is a desire to monolithically integrate different GaN devices into a single chip for the development of future optoelectronic systems with low power consumption. In addition to improved multifunctional performance, a miniature integrated system can result in a significant reduction in material costs, processing costs and packaging costs. In view of such prospects, we propose monolithic, top-down approaches to build III-nitride transmitter, modulator, waveguide, beam splitter, receiver and monitor as a single unit onto a conventional GaN-on-silicon wafer without involving regrowth or postgrowth doping. Data communication among these components is realized through light propagation, opening up new horizons for GaN optoelectronic systems on a chip.

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Why is it important?

The main topic of this manuscript is focused on the monolithic integration of transmitter, modulator, waveguide, beam splitter, receiver and monitor with top-down approaches. All devices share an identical structure and were fabricated from a single GaN-on-silicon wafer monolithically. These advanced technologies are beneficial to the development of future optoelectronic systems with low power consumption. The experimental results demonstrate that a monolithic GaN optoelectronic system chip can work effectively in the ultraviolet band. The chip was fabricated without postgrowth doping, and it was characterized in detail. Our chip is competent in the tasks of light emission, photon detection, emission and absorption modulation, beam splitting and light transmission. Moreover, all the components work together to form an on-chip data communication system by virtue of its efficient multiple interconnections. This study may lead to large-scale optoelectronic integration in the near future. We believe it provides important reference value for related research.