What is it about?

The article reports a study of electronic and structural properties of Tellurium free Gallium-Antimony alloys for phase change memory applications. A study of phase transformation and bonding changes of blanket thin films upon amorphous- crystalline switching ,as well as electrical analysis of PCM templates based on Ga-Sb alloys has been shown in this article.

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Why is it important?

In-situ x-ray diffraction(XRD) and transmission electron microscopy(TEM) study of Ga-Sb alloys revealed a new mechanism for programming multiple resistance states based on composition control. This will help in engineering multilayer structures that can lead to multilevel resistance states for analog memory memory applications.


Writing this article I expanded on my understanding of phase change material and came across a great deal of work on Te-free Sb rich Phase change material. It helped me obtain a great knowledge on different material characterization techniques as well as an understanding of the phase transformation at an atomistic level. These findings would help us in engineering structures demonstrating analog performance.

Rubab Ume
SUNY Polytechnic Institute

Read the Original

This page is a summary of: Electrical and structural properties of binary Ga–Sb phase change memory alloys, Journal of Applied Physics, July 2022, American Institute of Physics,
DOI: 10.1063/5.0096022.
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