What is it about?
Theoretical prediction on how to improve the performance and reliability of MOSFET
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Why is it important?
We propose theoretically the advanced method to realize high-performance MOSFETs and confirm our theoretical prediction by experiment.
Perspectives
I hope this article makes the further advance of LSI technology.
Takamitsu Ishihara
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This page is a summary of: Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification, AIP Advances, May 2020, American Institute of Physics,
DOI: 10.1063/5.0005813.
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