What is it about?

We demonstrate the record-high tunability and output powers in the 2.5-3.0 µm wavelength range from external cavity GaSb lasers based on Littrow configuration (100 mW peak power), and silicon photonics reflectors (10 mW peak power). The silicon photonics reflector is based on Vernier effect between two ring resonators.

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Why is it important?

Previously silicon photonics platforms have been limited to lower wavelengths (max. 2.5 µm). These lasers could be very useful in the spectroscopy, because many environmental gases, like carbon dioxide and water, have strong absorption in this wavelength range. With silicon photonics, very compact, robust, and cost-effective sensing instruments can be built.

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This page is a summary of: GaSb diode lasers tunable around 2.6 μm using silicon photonics resonators or external diffractive gratings, Applied Physics Letters, February 2020, American Institute of Physics,
DOI: 10.1063/1.5140062.
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