What is it about?

Spin Transfer Torque Magnetic memory is conceived as an alternative to the incumbent charge-based memories. However, to make its speed equivalent to the current high-speed memories, the applied current has to be quite high, resulting in a larger footprint and higher power dissipation. By incorporating Antiferromagnet based spin torque oscillator, we have shown that the switching speed could be improved without increasing the applied current.

Featured Image

Why is it important?

There is a lot of interest among the researchers about the spin-transfer torque memory due to its non-volatility, almost zero static power consumption, and the possibility of the back end of the line integration. However, the operation power is quite high when operating at a fast speed. This work demonstrates a possible method to reduce the operating power of the memory without compromising the performance of it.

Read the Original

This page is a summary of: High-speed STT MRAM incorporating antiferromagnetic layer, Applied Physics Letters, January 2019, American Institute of Physics,
DOI: 10.1063/1.5078525.
You can read the full text:




The following have contributed to this page