Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, E. Monroy
  • Applied Physics Letters, September 2014, American Institute of Physics
  • DOI: 10.1063/1.4896679

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The following have contributed to this page: Dr Joel Eymery