Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

G. Ndong, G. Picardi, C. Licitra, D. Rouchon, J. Eymery, R. Ossikovski
  • Journal of Applied Physics, October 2013, American Institute of Physics
  • DOI: 10.1063/1.4826907

What is it about?

Study of the strain in silicon nano-stripes with the Raman technique.

Why is it important?

Strain silicon stripes on "silicon on insulator" substrate provide very good materials to get high performance transistors. The strain enhances important features of these devices.

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http://dx.doi.org/10.1063/1.4826907

The following have contributed to this page: Dr Joel Eymery