What is it about?
In electronics, NDR is widely used in high-speed applications and functional applications. Various graphene NDR devices have been proposed but the basic mechanism of resonant tunneling has not been explored. In this work, we show that the NDR feature is graphene is very weak, because it steams from a competition between hole-to-electron transport, Klein tunneling and the resonant tunneling. We also find that, the NDR region is always locked at a bias equals to the Fermi energy and can be exactly controlled by the back gate.
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Why is it important?
The exact control of NDR region by the back gate voltage has important applications in high-speed switching circuits, where the lower output voltage determined exactly by NDR bias region, and in static memory elements, where and the two stored states determined exactly by NDR bias region.
Perspectives
I hope the revealed competition mechanism for NDR graphene and the novel gate-tunability can help further investigations of other people.
Dr. Yu Song
Read the Original
This page is a summary of: Negative differential resistances in graphene double barrier resonant tunneling diodes, Applied Physics Letters, March 2013, American Institute of Physics,
DOI: 10.1063/1.4794952.
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