Probing carrier diffusion and diffusion using an individual defect as a sensor

What is it about?

A confocal optical system is used to measure the spatial variation of the photoluminescence intensity in a high quality GaAs sample with a very low defect density. An individual defect, here a dislocation, serves as a probe to study the carrier diffusion near the defect, which allows extracting the semi-intrinsic carrier diffusion length when the defect is not present.

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Why is it important?

Carrier diffusion length depends on the carrier density non-monotonically.