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Very good photoluminescence properties of GaN wires are obtained using unusual growth conditions for catalyst-free GaN wires.

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Why is it important?

Narrow band edge emission of GaN wires grown by MOVPE on sapphire substrate. Unusual growth conditions and mechanisms discussion. Epitaxial relationships. No silane doping.

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This page is a summary of: Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy, Applied Physics Letters, December 2011, American Institute of Physics, DOI: 10.1063/1.3671365.
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