Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

X. J. Chen, B. Gayral, D. Sam-Giao, C. Bougerol, C. Durand, J. Eymery
  • Applied Physics Letters, December 2011, American Institute of Physics
  • DOI: 10.1063/1.3671365

MOVPE catalyst-free growth of GaN wires

What is it about?

Very good photoluminescence properties of GaN wires are obtained using unusual growth conditions for catalyst-free GaN wires.

Why is it important?

Narrow band edge emission of GaN wires grown by MOVPE on sapphire substrate. Unusual growth conditions and mechanisms discussion. Epitaxial relationships. No silane doping.

Read Publication

http://dx.doi.org/10.1063/1.3671365

The following have contributed to this page: Dr Joel Eymery